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Browsing by Author "Holländer, B."

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    Dislocation nucleation and movement in helium implanted SiGe/Si(001)Heterostructures studied by in-situ TEM

    Hueging, N.
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    Luysberg, M.
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    Urban, K.
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    Buca, D.
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    Holländer, B.
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    Mantl, S.
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    Morschbacher, M.
    Oral presentation
    2004, Dislocation Meeting
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    He implantation induced relaxation of SiGe/Si: nucleation of dislocations and coarsening of He bubbles

    Luysberg, M.
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    Hueging, N.
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    Urban, K.
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    Buca, D.
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    Holländer, B.
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    Mantl, S.
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    Morschbacher, M.
    Proceedings paper
    2004, Program and Abstracts Book 2nd International SiGe Technology and Device Meeting - ISTDM, 17/05/2004, p.117-118
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    Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer

    Buca, D.
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    Trinkaus, H.
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    Holländer, B.
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    Loo, Roger  
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    Nguyen, Duy
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    Mantl, S.
    Proceedings paper
    2008, 4th International SiGe Technology and Device Meeting, 11/05/2008, p.40-41
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    In-situ TEM on He implantation induced defects in SiGe/Si

    Luysberg, Martina
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    Hueging, N.
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    Urban, K.
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    Buca, D.
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    Holländer, B.
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    Mantl, S.
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    Morschbacher, M.
    Proceedings paper
    2004, Proceedings of the 13th European Microscopy Congress. Volume 2: Materials Sciences, 22/08/2004, p.377-378
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    Strain relaxation of pseudomorphic Si1-xGe/Si(100) heterostructures after Si+ ion implantation

    Holländer, B.
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    Buca, D.
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    Mörschbächer, M.
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    Lenk, St.
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    Mantl, S.
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    Herzog, H.J.
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    Hackbarth, Th.
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    Loo, Roger  
    Journal article
    2004, Journal of Applied Physics, (96) 3, p.1745-1747
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    Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation

    Holländer, B.
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    Buca, D.M.
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    Lenk, S.
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    Mantl, S.
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    Herzog, H.J.
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    Hackbarth, T.
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    Loo, Roger  
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    Caymax, Matty  
    Oral presentation
    2004, 14th International Conference on Ion Beam Modification of Materials - IBMM
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    Strain relaxation of SiGe buffers on Si and SOI wafers induced by He+ ion implantation and thermal annealing

    Mantl, S.
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    Holländer, B.
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    Hüging, N.
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    Luysberg, M.
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    Lenk, St.
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    Hogg, S.M.
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    Herzog, H.-J.
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    Hackbarth, T.
    Oral presentation
    2003, 12th EURO-CVD Workshop
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    Strained Si on relaxed SiGe made by ion implantation and strain transfer

    Mantl, S.
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    Buca, D.
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    Holländer, B.
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    Mörschbächer, M.
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    Trinkhaus, H.
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    Luysberg, M.
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    Hueging, N.
    Proceedings paper
    2004-10, SiGE: Materials, Processing, and Devices, 3/10/2004, p.731-740
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    Study of the relaxation of strain in patterned Si/SiGe structures using an x-ray diffraction technique

    Rehman Khan, Aaliya
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    Stangl, J.
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    Bauer, G.
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    Buca, D.
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    Holländer, B.
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    Trinkhaus, H.
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    Mantl, S.
    Journal article
    2007, Semiconductor Science and Technology, (22) 1, p.S212-S215
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    Tensely strained silicon on SiGe produced by strain transfer

    Buca, D.
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    Holländer, B.
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    Trinkaus, H.
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    Mantl, S.
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    Carius, R.
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    Loo, Roger  
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    Caymax, Matty  
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    Schaefer, H.
    Journal article
    2004-09, Applied Physics Letters, (85) 13, p.2499-2501
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    The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates

    Buca, D.
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    Mörschbächer, M.J.
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    Holländer, B.
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    Luysberg, M.
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    Loo, Roger  
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    Caymax, Matty  
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    Mantl, S.
    Proceedings paper
    2004, High-Mobility Group-IV Materials and Devices, 12/04/2004, p.15-26
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    Thin strain relaxed SiGe buffer layers on Si and SOI wafers made by He+ ion implantation and annealing

    Mantl, S.
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    Holländer, B.
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    Hüging, N.
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    Luysberg, M.
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    Lenk, S.
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    Hogg, S.M.
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    Herzog, H.J.
    ;
    Hackbarth, T.
    Meeting abstract
    2003, Abstracts Book ICSI3: 3rd International Conference on SiGe(C) Epitaxy and Heterostructures, 9/03/2003, p.117

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