Browsing by Author "Holländer, B."
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Publication Dislocation nucleation and movement in helium implanted SiGe/Si(001)Heterostructures studied by in-situ TEM
;Hueging, N. ;Luysberg, M. ;Urban, K. ;Buca, D. ;Holländer, B. ;Mantl, S.Morschbacher, M.Oral presentation2004, Dislocation MeetingPublication He implantation induced relaxation of SiGe/Si: nucleation of dislocations and coarsening of He bubbles
;Luysberg, M. ;Hueging, N. ;Urban, K. ;Buca, D. ;Holländer, B. ;Mantl, S.Morschbacher, M.Proceedings paper2004, Program and Abstracts Book 2nd International SiGe Technology and Device Meeting - ISTDM, 17/05/2004, p.117-118Publication Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer
Proceedings paper2008, 4th International SiGe Technology and Device Meeting, 11/05/2008, p.40-41Publication In-situ TEM on He implantation induced defects in SiGe/Si
;Luysberg, Martina ;Hueging, N. ;Urban, K. ;Buca, D. ;Holländer, B. ;Mantl, S.Morschbacher, M.Proceedings paper2004, Proceedings of the 13th European Microscopy Congress. Volume 2: Materials Sciences, 22/08/2004, p.377-378Publication Strain relaxation of pseudomorphic Si1-xGe/Si(100) heterostructures after Si+ ion implantation
;Holländer, B. ;Buca, D. ;Mörschbächer, M. ;Lenk, St. ;Mantl, S. ;Herzog, H.J. ;Hackbarth, Th.Journal article2004, Journal of Applied Physics, (96) 3, p.1745-1747Publication Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation
;Holländer, B. ;Buca, D.M. ;Lenk, S. ;Mantl, S. ;Herzog, H.J. ;Hackbarth, T.; Oral presentation2004, 14th International Conference on Ion Beam Modification of Materials - IBMMPublication Strain relaxation of SiGe buffers on Si and SOI wafers induced by He+ ion implantation and thermal annealing
;Mantl, S. ;Holländer, B. ;Hüging, N. ;Luysberg, M. ;Lenk, St. ;Hogg, S.M. ;Herzog, H.-J.Hackbarth, T.Oral presentation2003, 12th EURO-CVD WorkshopPublication Strained Si on relaxed SiGe made by ion implantation and strain transfer
;Mantl, S. ;Buca, D. ;Holländer, B. ;Mörschbächer, M. ;Trinkhaus, H. ;Luysberg, M.Hueging, N.Proceedings paper2004-10, SiGE: Materials, Processing, and Devices, 3/10/2004, p.731-740Publication Study of the relaxation of strain in patterned Si/SiGe structures using an x-ray diffraction technique
;Rehman Khan, Aaliya ;Stangl, J. ;Bauer, G. ;Buca, D. ;Holländer, B. ;Trinkhaus, H.Mantl, S.Journal article2007, Semiconductor Science and Technology, (22) 1, p.S212-S215Publication Tensely strained silicon on SiGe produced by strain transfer
;Buca, D. ;Holländer, B. ;Trinkaus, H. ;Mantl, S. ;Carius, R.; ; Schaefer, H.Journal article2004-09, Applied Physics Letters, (85) 13, p.2499-2501Publication The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates
Proceedings paper2004, High-Mobility Group-IV Materials and Devices, 12/04/2004, p.15-26Publication Thin strain relaxed SiGe buffer layers on Si and SOI wafers made by He+ ion implantation and annealing
;Mantl, S. ;Holländer, B. ;Hüging, N. ;Luysberg, M. ;Lenk, S. ;Hogg, S.M. ;Herzog, H.J.Hackbarth, T.Meeting abstract2003, Abstracts Book ICSI3: 3rd International Conference on SiGe(C) Epitaxy and Heterostructures, 9/03/2003, p.117