Browsing by Author "Houssa, Michel"
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Publication 90nm W\Al2O3\TiW\Cu 1T1R CBRAM cell showing low-power, fast and disturb-free operation
Proceedings paper2013, 5th IEEE International Memory Workshop - IMW, 26/05/2013, p.26-29Publication A first-principles study of the structural and electronic properties of III-V/thermal oxide interfaces
Journal article2009, Microelectronic Engineering, (86) 7_9, p.1747-1750Publication A simulation analysis of FIBL in decananometer double-gate MOSFETs with high-k gate dielectrics
Journal article2005, Journal of Non-Crystalline Solids, (351) 21_23, p.1897-1901Publication A step towards a better understanding of silicon passivated (100) Ge p-channel
; ; ; ; Proceedings paper2007, Advanced Gate Stack , Source/Drain and Channel Engineering for Si-Based CMOS 3, 6/05/2007, p.53-63Publication A systematic study of various 2D materials in the light of defect formation and oxidation
Journal article2019, Physical Chemistry Chemical Physics, (21) 3, p.1089-1099Publication A theoretical study of the initial oxidation of the GaAs(001)-beta2(2x4) surface
Journal article2009, Applied Physics Letters, (95) 25, p.253504Publication A thermally stable and high-performance 90nm Al2O3\Cu-based 1T1R CBRAM cell
Journal article2013, IEEE Transactions on Electron Devices, (60) 11, p.3690-3695Publication Ab-intio based electron-phonon scattering for 2D materials within the NEGF framework
Proceedings paper2021, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), SEP 27-29, 2021, p.167-170Publication Achievements and challenges for the electrical performance of MOSFETs with high-k gate dielectrics
Proceedings paper2004, Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 5/07/2004, p.147-155Publication Adsorption of molecular oxygen on the reconstructed beta2(2x4)-GaAs(001) surface: a first-principles study
Journal article2009, Surface Science, (603) 1, p.203-208Publication Advanced cleaning for the growth of ultrathin gate oxide
Journal article1999, Microelectronic Engineering, (48) 1_4, p.199-206Publication Advanced DFT-NEGF Transport Techniques for Novel 2-D Material and Device Exploration Including HfS2/WSe2 van der Waals Heterojunction TFET and WTe2/WS2 Metal/Semiconductor Contact
Journal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 11, p.5372-5379Publication ALD deposition of high-k and metal gate stacks for advanced CMOS applications
Proceedings paper2004, Atomic Layer Deposition Conference, 16/08/2004Publication Alternative gate insulator materials for future generation MOSFETs
Oral presentation2001, International Forum on Semiconductor Technology - IFST; 7-8 March 2001; Antwerpen, Belgium.Publication An electric field tunable energy band gap at silicene/(0001) ZnS interfaces
Journal article2013, Physical Chemistry Chemical Physics, (15) 11, p.3702-3705Publication Analysis of high voltage TDDB measurements on Ta2O5/SiO2 stack
Proceedings paper1999, International Electron Devices Meeting. Technical digest; December 1999; Washington, D.C., p.327-330Publication Analysis of the excellent memory disturb characteristics of a hourglass-shaped filament in Al2O3/Cu-based CBRAM devices
Journal article2015, IEEE Transactions on Electron Devices, (62) 6, p.2007-2013Publication Analysis of the gate voltage fluctuations in ultra-thin gate oxides after soft breakdown
Proceedings paper1998, Technical Digest International Electron Devices Meeting - IEDM, 6/12/1998, p.909-912Publication Analysis of transferred MoS2 layers grown by MOCVD: evidence of Mo vacancy related defect formation
Journal article2020, ECS Journal of Solid State Science and Technology, (9) 9, p.93001Publication Atomic layer deposition as an enabling technology for fabrication of germanium MOS transistor
Oral presentation2007, 7th International Conference Atomic Layer Deposition Conference - ALD