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Browsing by Author "Hsu, Stephen"

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    Assist features: placement, impact and relevance

    Mochi, Iacopo
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    Philipsen, Vicky  
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    Gallagher, Emily  
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    Hendrickx, Eric  
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    Lyakhova, Kateryna  
    Proceedings paper
    2016, Extreme Ultraviolet (EUV) Lithography VII, 21/02/2016, p.97761S
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    Double dipole lithography for 65-nm node and beyond: a technology readiness review

    Hsu, Stephen
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    Eurlings, Mark
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    Hendrickx, Eric  
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    Van Den Broeke, Douglas J.
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    Chiou, Tsann-Bim
    Proceedings paper
    2004-08, Photomask and Next-Generation Lithography Mask Technology XI, 14/04/2004, p.481-498
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    Experimental verification of source-mask optimization and freeform illumination for 22 nm node SRAM cells

    Bekaert, Joost  
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    Laenens, Bart
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    Verhaegen, Staf
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    Van Look, Lieve  
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    Trivkovic, Darko  
    Journal article
    2011-03, Journal of Micro/Nanolithography MEMS and MOEMS, (10) 1, p.13008
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    Freeform illumination sources: Source mask optimization for 22 nm node SRAM

    Bekaert, Joost  
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    Laenens, Bart
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    Verhaegen, Staf
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    Van Look, Lieve  
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    Trivkovic, Darko  
    Proceedings paper
    2009, 6th International Symposium on Immersion Lithography Extensions, 22/10/2009
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    OPC resist model separability validation after SMO source change

    Gillijns, Werner  
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    Van de Kerkhove, Jeroen  
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    Trivkovic, Darko  
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    De Bisschop, Peter  
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    Rio, David  
    Proceedings paper
    2013, Optical Microlithography XXVI, 24/02/2013, p.86831B
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    Through pitch low-k1 contact hole imaging with CPL(TM) technology

    Wiaux, Vincent  
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    Bekaert, Joost  
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    Ronse, Kurt  
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    Vandenberghe, Geert  
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    Fung Chen, J.
    ;
    Hsu, Stephen
    Journal article
    2004, Photomask, BACUS News, (20) 12, p.1-11
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    Through pitch low-k1 contact hole imaging with CPLTM technology

    Wiaux, Vincent  
    ;
    Bekaert, Joost  
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    Fung Chen, J.
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    Hsu, Stephen
    ;
    Ronse, Kurt  
    ;
    Socha, Robert
    Proceedings paper
    2004, Photomask and Next-Generation Lithography Mask Technology XI, 14/04/2004, p.585-594

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