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Browsing by Author "Hu, Jie"

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    AlGaN/GaN power Schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate

    Lenci, Silvia  
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    Hu, Jie
    ;
    Ronchi, Nicolo  
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    Decoutere, Stefaan  
    Proceedings paper
    2016, 28th International Symposium on Power Semiconductor Devices and ICs - ISPSD, 12/06/2016, p.91-94
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    Au-free AlGaN/GaN power diode on 8 in Si substrate with gated edge termination

    Lenci, Silvia  
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    De Jaeger, Brice  
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    Carbonell, Laure
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    Hu, Jie
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    Mannaert, Geert  
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    Wellekens, Dirk  
    Journal article
    2013, IEEE Electron Device Letters, (34) 8, p.1035-1037
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    Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer

    Ronchi, Nicolo  
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    De Jaeger, Brice  
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    Van Hove, Marleen
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    Roelofs, Robin
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    Wu, Tian-Li
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    Hu, Jie
    Proceedings paper
    2014, International Solid State Devices and Materials Conference - SSDM, 8/09/2014
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    Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN

    Ronchi, Nicolo  
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    De Jaeger, Brice  
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    Van Hove, Marleen
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    Roelofs, Robin
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    Wu, Tian-Li
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    Hu, Jie
    Journal article
    2015, Japanese Journal of Applied Physics, (54) 4S, p.04DF02
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    Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

    Hu, Jie
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    Stoffels, Steve  
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    Lenci, Silvia  
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    Bakeroot, Benoit  
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    Venegas, Rafael
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    Groeseneken, Guido  
    Journal article
    2015, Applied Physics Letters, (106) 8, p.83502
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    Device breakdown optimization of Al2O3/GaN E-mode MISFETs

    Kang, Xuanwu
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    Wellekens, Dirk  
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    Van Hove, Marleen
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    De Jaeger, Brice  
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    Ronchi, Nicolo  
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    Wu, Tian-Li
    Proceedings paper
    2016, IEEE International Reliability Physics Symposium - IRPS, 17/04/2016, p.CD-5
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    High performance and stable Au-free AlGaN/GaN lateral power diode on 200-mm silicon substrate

    Hu, Jie
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    Stoffels, Steve  
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    Lenci, Silvia  
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    Decoutere, Stefaan  
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    Groeseneken, Guido  
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    Palacios, Tomas
    Meeting abstract
    2016, MTL Annual Research Conference, 20/01/2016, p.18
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    Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination

    Hu, Jie
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    Stoffels, Steve  
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    Lenci, Silvia  
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    Ronchi, Nicolo  
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    De Jaeger, Brice  
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    You, Shuzhen  
    Meeting abstract
    2016, Compound Semiconductor Week - CSW, 26/06/2016, p.1
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    Improvement of the dynamic characteristics of Au-free AlGaN/GaN Schottky diodes on 200 mm Si wafers by surface treatments

    Lenci, Silvia  
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    Hu, Jie
    ;
    Van Hove, Marleen
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    Ronchi, Nicolo  
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    Decoutere, Stefaan  
    Proceedings paper
    2014, 26th International Symposium on Power Semiconductor Devices and ICs - ISPSD, 15/06/2014
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    Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes

    Hu, Jie
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    Stoffels, Steve  
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    Lenci, Silvia  
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    Wu, Tian-Li
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    Ronchi, Nicolo  
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    You, Shuzhen  
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    Bakeroot, Benoit  
    Journal article
    2015, Japanese Journal of Applied Physics, (54) 4S, p.04DF07
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    Investigation of trapping effects on Au-free AlGaN/GaN Schottky diodes fabricated on C-doped buffer layers

    Hu, Jie
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    Stoffels, Steve  
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    Lenci, Silvia  
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    You, Shuzhen  
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    Bakeroot, Benoit  
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    Ronchi, Nicolo  
    Meeting abstract
    2015, International Conference on Nitride Semiconductors - ICNS-11, 30/08/2015
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    Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers

    Hu, Jie
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    Stoffels, Steve  
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    Lenci, Silvia  
    ;
    You, Shuzhen  
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    Bakeroot, Benoit  
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    Ronchi, Nicolo  
    Journal article
    2016, Physica Status Solidi A, (213) 5, p.1229-1235
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    Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

    Hu, Jie
    ;
    Lenci, Silvia  
    ;
    Stoffels, Steve  
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    De Jaeger, Brice  
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    Groeseneken, Guido  
    ;
    Decoutere, Stefaan  
    Meeting abstract
    2013, 10th International Conference on Nitride Semiconductors, 25/08/2013
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    Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

    Hu, Jie
    ;
    Lenci, Silvia  
    ;
    Stoffels, Steve  
    ;
    De Jaeger, Brice  
    ;
    Groeseneken, Guido  
    ;
    Decoutere, Stefaan  
    Journal article
    2014, Physica Status Solidi C, (11) 3_4, p.862-865
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    On the identification of buffer trapping for bias-dependent RON instability of AlGaN/GaN schottky barrier diode with AlGaN:C back barrier

    Hu, Jie
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    Stoffels, Steve  
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    Lenci, Silvia  
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    Groeseneken, Guido  
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    Decoutere, Stefaan  
    Journal article
    2016, IEEE Electron Device Letters, (37) 3, p.310-313
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    On the origin of the two-dimensional electron gas at AlGaN/GaN at AlGaN/GaN heterojunctions and its influence on gate-recessed MISHEMTs - A TCAD study

    Bakeroot, Benoit  
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    You, Shuzhen  
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    Wu, Tian-Li
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    Hu, Jie
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    Van Hove, Marleen
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    De Jaeger, Brice  
    Journal article
    2014, Journal of Applied Physics, (116) 13, p.134506
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    Optimization of the source field-plate design for low dynamic Rds-on dispersion of AlGaN/GaN MIS-HEMTs

    Ronchi, Nicolo  
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    Bakeroot, Benoit  
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    You, Shuzhen  
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    Hu, Jie
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    Stoffels, Steve  
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    De Jaeger, Brice  
    Journal article
    2017, Physica Status Solidi A, (214) 3, p.1600601
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    Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs

    Ronchi, Nicolo  
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    Bakeroot, Benoit  
    ;
    You, Shuzhen  
    ;
    Hu, Jie
    ;
    Stoffels, Steve  
    ;
    Decoutere, Stefaan  
    Proceedings paper
    2016, Compound Semiconductor Week - CSW, 26/07/2016
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    Performance optimization and long term stability of integrated GaN diodes

    Hu, Jie
    PHD thesis
    2016-06
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    Performance optimization of Au-free lateral AlGaN/GaN schottky barrier diode with gated edge termination on 200-mm silicon substrate

    Hu, Jie
    ;
    Stoffels, Steve  
    ;
    Lenci, Silvia  
    ;
    Bakeroot, Benoit  
    ;
    De Jaeger, Brice  
    ;
    Van Hove, Marleen
    Journal article
    2016, IEEE Transactions on Electron Devices, (63) 3, p.997-1004
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