Browsing by Author "Hu, Jie"
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Publication AlGaN/GaN power Schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate
Proceedings paper2016, 28th International Symposium on Power Semiconductor Devices and ICs - ISPSD, 12/06/2016, p.91-94Publication Au-free AlGaN/GaN power diode on 8 in Si substrate with gated edge termination
Journal article2013, IEEE Electron Device Letters, (34) 8, p.1035-1037Publication Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer
Proceedings paper2014, International Solid State Devices and Materials Conference - SSDM, 8/09/2014Publication Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN
Journal article2015, Japanese Journal of Applied Physics, (54) 4S, p.04DF02Publication Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode
Journal article2015, Applied Physics Letters, (106) 8, p.83502Publication Device breakdown optimization of Al2O3/GaN E-mode MISFETs
Proceedings paper2016, IEEE International Reliability Physics Symposium - IRPS, 17/04/2016, p.CD-5Publication High performance and stable Au-free AlGaN/GaN lateral power diode on 200-mm silicon substrate
;Hu, Jie; ; ; ; Palacios, TomasMeeting abstract2016, MTL Annual Research Conference, 20/01/2016, p.18Publication Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination
Meeting abstract2016, Compound Semiconductor Week - CSW, 26/06/2016, p.1Publication Improvement of the dynamic characteristics of Au-free AlGaN/GaN Schottky diodes on 200 mm Si wafers by surface treatments
Proceedings paper2014, 26th International Symposium on Power Semiconductor Devices and ICs - ISPSD, 15/06/2014Publication Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes
;Hu, Jie; ; ;Wu, Tian-Li; ; Journal article2015, Japanese Journal of Applied Physics, (54) 4S, p.04DF07Publication Investigation of trapping effects on Au-free AlGaN/GaN Schottky diodes fabricated on C-doped buffer layers
Meeting abstract2015, International Conference on Nitride Semiconductors - ICNS-11, 30/08/2015Publication Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
Journal article2016, Physica Status Solidi A, (213) 5, p.1229-1235Publication Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region
;Hu, Jie; ; ; ; Meeting abstract2013, 10th International Conference on Nitride Semiconductors, 25/08/2013Publication Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region
;Hu, Jie; ; ; ; Journal article2014, Physica Status Solidi C, (11) 3_4, p.862-865Publication On the identification of buffer trapping for bias-dependent RON instability of AlGaN/GaN schottky barrier diode with AlGaN:C back barrier
Journal article2016, IEEE Electron Device Letters, (37) 3, p.310-313Publication On the origin of the two-dimensional electron gas at AlGaN/GaN at AlGaN/GaN heterojunctions and its influence on gate-recessed MISHEMTs - A TCAD study
Journal article2014, Journal of Applied Physics, (116) 13, p.134506Publication Optimization of the source field-plate design for low dynamic Rds-on dispersion of AlGaN/GaN MIS-HEMTs
Journal article2017, Physica Status Solidi A, (214) 3, p.1600601Publication Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs
Proceedings paper2016, Compound Semiconductor Week - CSW, 26/07/2016Publication Performance optimization and long term stability of integrated GaN diodes
Hu, JiePHD thesis2016-06Publication Performance optimization of Au-free lateral AlGaN/GaN schottky barrier diode with gated edge termination on 200-mm silicon substrate
Journal article2016, IEEE Transactions on Electron Devices, (63) 3, p.997-1004