Browsing by Author "Jeamsaksiri, Wutthinan"
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Publication 90nm RF CMOS technology for low-power 900MHz applications
Proceedings paper2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.329-332Publication A 328 uW5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor
Proceedings paper2004-06, Proceedings of the IEEE 2004 Custom Integrated Circuits Conference - CICC, 17/06/2004, p.701-704Publication A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS
Journal article2005-06, IEEE Journal of Solid-State Circuits, (40) 7, p.1434-1442Publication A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS
Proceedings paper2004-09, Proceedings of the 30th European Solid-State Circuits - ESSCIRC, 20/09/2004, p.291-294Publication A 90nm RF CMOS technology supported by device modelling and circuit demonstrators
Oral presentation2004, MOS-AK/ESSCIRC WorkshopPublication A low cost 90nm RF-CMOS platform for record RF circuit performance
Proceedings paper2005-06, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2005, p.60-61Publication An integrated 5 GHz low-noise amplifier with 5.5 kV HBM ESD protection in 90nm RF CMOS
Proceedings paper2005-06, Symposium on VLSI Circuits Technical Digest, 16/06/2005, p.86-89Publication Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies
Publication Design-driven optimisation of a 90 nm RF CMOS process by use of elevated source/drain
Proceedings paper2003-09, 33rd European Solid-State Devices Research Conference - ESSDERC, 16/09/2003, p.43-46Publication Elevated co-silicide for sub-100nm high performance and RF CMOS
Proceedings paper2002, ESSDERC - 32nd European Solid-State Device Research Conference, 24/09/2002, p.311-314Publication Gate-source-drain architecture impact on DC and performance of sub-100-nm elevated source/drain NMOS transistors
Journal article2003, IEEE Trans. Electron Devices, (50) 3, p.610-617Publication Hot-carrier degradation on the analogue/RF performances of a 90nm RF-CMOS technology demonstrated in a 900MHz low-power LNA
Proceedings paper2005, Proceedings IEEE VLSI-TSA International Symposium on VLSI Technology, 25/04/2005, p.64-65Publication Impact of elevated source drain architecture on ESD protection devices for a 90 nm CMOS technology node
Proceedings paper2003-09, EOS/ESD Symposium, 21/09/2003, p.242-249Publication Impact of remote plasma nitridation (RPN) on the Low-frequency noise (1/f)
Publication Impact of scaling on analog/RF CMOS performance
Proceedings paper2004-10, The 7th International Conference on Solid-State and Integrated-Circuit Technology, 18/10/2004, p.147-152Publication Impact of scaling on analog/RF CMOS performance
Proceedings paper2004, 3rd International Symposium on Information and Communication Technologies - ISICT, 16/06/2004Publication Implementation of plug-and-play ESD protection in 5.5 GHz 90 nm RF CMOS LNAs - concepts, constraints and solutions
Journal article2005, Microelectronics ReliabilityPublication Integration of a 90nm RF CMOS technology (200GHz fmax - 150GHz fT NMOS) demonstrated on a 5GHz LNA
Proceedings paper2004, Technical Digest VLSI Technology Symposium, 15/06/2004, p.100-101Publication Low-power 5 GHz LNA and VCO in 90 nm RF CMOS
Proceedings paper2004-06, Technical Digest Symposium on VLSI Circuits, 15/06/2004, p.372-375Publication Low-power voltage-controlled oscillators in 90 nm CMOS using high-quality thin-film post-processed inductors
Journal article2005-09, IEEE Journal of Solid State Circuits, (40) 9, p.1922-1931