Browsing by Author "Jiang, X."
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Publication Audiovisual scene analysis: mother-child communication
Proceedings paper2007, XIIIth Convention of Electrical Engineering - CIE, 18/06/2007Publication Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Proceedings paper2016, IEEE Symposium on VLSI Technology, 13/06/2016, p.42-43Publication First demonstration of ~3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack
Proceedings paper2017, Symposium on VLSI Technology, 5/06/2017, p.38-39Publication Gate stack thermal stability and PBTI reliability challenges for 3D sequential integration: demonstration of a suitable gate stack for top and bottom tier nMOS
Proceedings paper2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.2B-3.1-2B3.5Publication Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow
Proceedings paper2015, IEEE International Electron Devices Meeting - IEDM, 7/12/2015, p.799-802Publication Heterogenously integrated III-V/Silicon dual-mode distributed feedback laser array for terahertz generation
;Shao, H. ;Keyvaninia, Shahram ;Vanwolleghem, Mathias ;Ducournau, GuillaumeJiang, X.Journal article2014-11, Optics Letters, (39) 22, p.6403-6406Publication Large bandwidth and high accuracy photonic-assisted instantaneous microwave frequency estimation system based on an integrated silicon micro-resonator
Proceedings paper2014, 11th International Conference on Group IV Photonics - GFP, 27/08/2014, p.47-48Publication Nature of lossy Bloch states in polaritonic photonic crystals
Journal article2004-05, Physial Review B, (69) 19, p.195111-1-195111-10Publication Nonlinear photonic crystals near the supercollimation point
;Xu, Z. ;Maes, Bjorn ;Jiang, X. ;Joannopoulos, J. ;Torner, L.Soljacic, M.Journal article2008-08, Optics Letters, (33) 15, p.1762-1764Publication Record mobility (μeff ~3100 cm²/V-s) and reliability performance (Vov~0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer
; ; ; ; ;Sioncke, Sonja; Proceedings paper2016, IEEE Symposium on VLSI Technology, 13/06/2016, p.140-141