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Browsing by Author "Kondoh, Eiichi"

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    A chemical role of refractory metal caps in Co silicidation: Evidence of SiO2 reduction by Ti cap

    Kondoh, Eiichi
    ;
    Conard, Thierry  
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    Brijs, Bert
    ;
    Jin, S.
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    Bender, Hugo  
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    de Potter de ten Broeck, Muriel  
    Journal article
    1999, J. Materials Research, (14) 11, p.4402-4408
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    Applicability of HF solutions for contact hole cleaning on top of TiSi2

    Baklanov, Mikhaïl
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    Kondoh, Eiichi
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    Vanhaelemeersch, Serge  
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    Maex, Karen  
    Proceedings paper
    1998, Proceedings of the 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, 31/08/1997, p.602-609
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    Applications of in-line oxygen monitoring to a rapid thermal processing tool: diagnosing gas flow dynamics and silicidation processes

    Kondoh, Eiichi
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    Baklanov, Mikhaïl
    ;
    Maex, Karen  
    Journal article
    2000, Materials Science in Semiconductor Processing, (2) 4, p.341-348
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    Characterisation of HF-last cleaning of ion-implanted Si surfaces

    Kondoh, Eiichi
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    Baklanov, Mikhaïl
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    Jonckx, Franky
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    Maex, Karen  
    Journal article
    1998, Materials Science in Semiconductor Processing, (1) 2, p.107-117
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    Characterization of HF-last cleaning of ion-implanted Si surfaces

    Kondoh, Eiichi
    ;
    Baklanov, Mikhaïl
    ;
    Maex, Karen  
    Proceedings paper
    1999, Ultra Clean Processing of Silicon Surfaces; Proceedings of the 4th International Symposium on Ultra Clean Processing of Silicon, 21/09/1998, p.271-274
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    Characterization of HF-last cleaning of ion-implanted Si surfaces

    Kondoh, Eiichi
    ;
    Baklanov, Mikhaïl
    ;
    Maex, Karen  
    Oral presentation
    1998, 4th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS
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    Comparative study of pore size of low-dielectric-constant porous spin-on-glass films using different methods of nondestructive instrumentation

    Kondoh, Eiichi
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    Baklanov, Mikhaïl
    ;
    Lin, E.
    ;
    Gidley, D.
    ;
    Nakashima, A.
    Journal article
    2001, Japanese Journal of Applied Physics Part 2-Letters, (40) 4A, p.L323-L326
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    Comparative study of porous SOG films with different non-destructive instrumentation

    Baklanov, Mikhaïl
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    Kondoh, Eiichi
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    Linskens, Frank
    ;
    Gidley, D. W.
    ;
    Lee, Hean-Cheal
    Proceedings paper
    2001, Proceedings of the IEEE 2001 International Interconnect Technology Conference, 4/06/2001, p.189-191
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    Control and impact of processing ambient during rapid thermal silicidation

    Maex, Karen  
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    Kondoh, Eiichi
    ;
    Lauwers, Anne  
    ;
    Steegen, An
    ;
    de Potter de ten Broeck, Muriel  
    Proceedings paper
    1998, Rapid and Contact Integrated Processing VII, 13/04/1998, p.297-306
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    Critical role of degassing for hot aluminum filling

    Proost, Joris
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    Kondoh, Eiichi
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    Vereecke, Guy  
    ;
    Heyns, Marc  
    ;
    Maex, Karen  
    Journal article
    1998, Journal of Vacuum Science and Technology B, (16) 4, p.2091-2098
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    Development of a non-destructive thin film porosimetry: pore size distribution and pore volume of porous silica

    Baklanov, Mikhaïl
    ;
    Dultsev, F. N.
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    Kondoh, Eiichi
    ;
    Mogilnikov, K. P.
    ;
    Maex, Karen  
    ;
    Wang, Sharon
    Proceedings paper
    1999, Advanced Metallization Conference in 1998. Proceedings of the Conference;, p.507-512
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    In situ gas analysis on an RTP tool with APIMS

    Vereecke, Guy  
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    Kondoh, Eiichi
    ;
    Richardson, Paul
    ;
    Maex, Karen  
    ;
    Heyns, Marc  
    ;
    Nényei, Z.
    Proceedings paper
    1998, 44th Annual Meeting of Inst. Environmental Science and Technology, 26/04/1998, p.519-526
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    In-line ambient impurity measurement of a rapid thermal process chamber by using atmospheric pressure ionization mass spectrometer

    Kondoh, Eiichi
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    Vereecke, Guy  
    ;
    Heyns, Marc  
    ;
    Maex, Karen  
    ;
    Gutt, T.
    ;
    Nényei, Z.
    Proceedings paper
    1998, Rapid Thermal and Integrated Processing VII, 13/04/1998, p.51-56
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    In-line monitoring of HF-last cleaning of implanted and non-implanted silicon surfaces by non-contact surface charge measurements

    Kondoh, Eiichi
    ;
    Trauwaert, Marie-Astrid
    ;
    Heyns, Marc  
    ;
    Maex, Karen  
    Proceedings paper
    1998, Proceedings of the 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, 31/08/1997, p.221-228
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    In-situ oxygen monitoring of rapid thermal process chamber: diagnosis of gas flow dynamics and wafer processing

    Kondoh, Eiichi
    ;
    Maex, Karen  
    Proceedings paper
    1997, Rapid Thermal and Integrated Processing VI, 1/04/1997, p.245-251
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    Interaction between Co and SiO2

    Kondoh, Eiichi
    ;
    Donaton, R. A.
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    Jin, S.
    ;
    Bender, Hugo  
    ;
    Vandervorst, Wilfried  
    ;
    Maex, Karen  
    Journal article
    1998, Applied Surface Science, (32) 3_4, p.87-94
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    Limitation of HF-based chemistry for deep-submicron contact hole cleaning on silicides

    Baklanov, Mikhaïl
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    Kondoh, Eiichi
    ;
    Alves Donaton, Ricardo
    ;
    Vanhaelemeersch, Serge  
    ;
    Maex, Karen  
    Journal article
    1998, Journal of the Electrochemical Society, (145) 9, p.3240-3246
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    Measurements of trace gaseous ambient impurities on an atmospheric pressure rapid thermal processor

    Kondoh, Eiichi
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    Vereecke, Guy  
    ;
    Heyns, Marc  
    ;
    Maex, Karen  
    ;
    Gutt, T.
    Journal article
    1999, J. Vacuum Science and Technology A, (17) 2, p.650-656
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    Non-destructive determination of pore size distribution of low-k porous SOG films

    Baklanov, Mikhaïl
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    Kondoh, Eiichi
    ;
    Gidley, D.
    ;
    Lin, E.
    ;
    Wu, Wen
    ;
    Arao, H.
    ;
    Mogilnikov, K. P.
    Oral presentation
    2000, 60th Japan Society of Applied Physics Autumn Meeting; September 2000; Japan.
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    Oxidation and roughening of silicon during annealing in a rapid thermal processing chamber

    Mohadjeri, Babak
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    Baklanov, Mikhaïl
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    Kondoh, Eiichi
    ;
    Maex, Karen  
    Journal article
    1998, Journal of Applied Physics, (83) 7, p.3614-3619
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