Browsing by Author "Kondoh, Eiichi"
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Publication A chemical role of refractory metal caps in Co silicidation: Evidence of SiO2 reduction by Ti cap
;Kondoh, Eiichi; ;Brijs, Bert ;Jin, S.; Journal article1999, J. Materials Research, (14) 11, p.4402-4408Publication Applicability of HF solutions for contact hole cleaning on top of TiSi2
Proceedings paper1998, Proceedings of the 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, 31/08/1997, p.602-609Publication Applications of in-line oxygen monitoring to a rapid thermal processing tool: diagnosing gas flow dynamics and silicidation processes
Journal article2000, Materials Science in Semiconductor Processing, (2) 4, p.341-348Publication Characterisation of HF-last cleaning of ion-implanted Si surfaces
Journal article1998, Materials Science in Semiconductor Processing, (1) 2, p.107-117Publication Characterization of HF-last cleaning of ion-implanted Si surfaces
Proceedings paper1999, Ultra Clean Processing of Silicon Surfaces; Proceedings of the 4th International Symposium on Ultra Clean Processing of Silicon, 21/09/1998, p.271-274Publication Characterization of HF-last cleaning of ion-implanted Si surfaces
Oral presentation1998, 4th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSSPublication Comparative study of pore size of low-dielectric-constant porous spin-on-glass films using different methods of nondestructive instrumentation
;Kondoh, Eiichi ;Baklanov, Mikhaïl ;Lin, E. ;Gidley, D.Nakashima, A.Journal article2001, Japanese Journal of Applied Physics Part 2-Letters, (40) 4A, p.L323-L326Publication Comparative study of porous SOG films with different non-destructive instrumentation
;Baklanov, Mikhaïl ;Kondoh, Eiichi ;Linskens, Frank ;Gidley, D. W.Lee, Hean-ChealProceedings paper2001, Proceedings of the IEEE 2001 International Interconnect Technology Conference, 4/06/2001, p.189-191Publication Control and impact of processing ambient during rapid thermal silicidation
Proceedings paper1998, Rapid and Contact Integrated Processing VII, 13/04/1998, p.297-306Publication Critical role of degassing for hot aluminum filling
Journal article1998, Journal of Vacuum Science and Technology B, (16) 4, p.2091-2098Publication Development of a non-destructive thin film porosimetry: pore size distribution and pore volume of porous silica
Proceedings paper1999, Advanced Metallization Conference in 1998. Proceedings of the Conference;, p.507-512Publication In situ gas analysis on an RTP tool with APIMS
Proceedings paper1998, 44th Annual Meeting of Inst. Environmental Science and Technology, 26/04/1998, p.519-526Publication In-line ambient impurity measurement of a rapid thermal process chamber by using atmospheric pressure ionization mass spectrometer
Proceedings paper1998, Rapid Thermal and Integrated Processing VII, 13/04/1998, p.51-56Publication In-line monitoring of HF-last cleaning of implanted and non-implanted silicon surfaces by non-contact surface charge measurements
Proceedings paper1998, Proceedings of the 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, 31/08/1997, p.221-228Publication In-situ oxygen monitoring of rapid thermal process chamber: diagnosis of gas flow dynamics and wafer processing
;Kondoh, EiichiProceedings paper1997, Rapid Thermal and Integrated Processing VI, 1/04/1997, p.245-251Publication Interaction between Co and SiO2
Journal article1998, Applied Surface Science, (32) 3_4, p.87-94Publication Limitation of HF-based chemistry for deep-submicron contact hole cleaning on silicides
Journal article1998, Journal of the Electrochemical Society, (145) 9, p.3240-3246Publication Measurements of trace gaseous ambient impurities on an atmospheric pressure rapid thermal processor
Journal article1999, J. Vacuum Science and Technology A, (17) 2, p.650-656Publication Non-destructive determination of pore size distribution of low-k porous SOG films
;Baklanov, Mikhaïl ;Kondoh, Eiichi ;Gidley, D. ;Lin, E. ;Wu, Wen ;Arao, H.Mogilnikov, K. P.Oral presentation2000, 60th Japan Society of Applied Physics Autumn Meeting; September 2000; Japan.Publication Oxidation and roughening of silicon during annealing in a rapid thermal processing chamber
Journal article1998, Journal of Applied Physics, (83) 7, p.3614-3619