Browsing by Author "Kunert, Bernardette"

0.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer

A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies

A ViT-Based Approach for Enhanced Defect Classification in Nano-Ridge Engineering Using Multi-Resolution Images

Advanced characterization and parameter extraction of electrically injected InGaAs/GaAs nano-ridge lasers monolithically integrated on silicon

Advanced Current-Voltage Model of Electrical Contacts to GaAs- and Ge-Based Active Silicon Photonic Devices

Advanced transistors for high frequency applications

An adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT technology on 300 mm Si for RF applications

Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates

Application of an Sb Surfactant in InGaAs Nano-ridge Engineering on 300 mm Silicon Substrates

Application of electron channeling contrast imaging to 3D semiconductor structures through proper detector configurations

Are extended defects a show stopper for future III-V CMOS technologies?

Challenges on surface conditioning in 3D device architectures: triple-gate FinFETs, gate-all-around lateral and vertical nanowire FETs

Challenges on surface conditioning in 3D device architectures: triple-gate finFETs, gate-all-around lateral and vertical nanowireFETs

Compact 1.31-μm-emission In0.45Ga0.55As/ In0.25Ga0.75As photonic crystal nanoridge laser monolithically grown on 300 mm silicon substrate

Constructing III-V nano-ridge photodetectors on silicon: Monolithic integration of III-V devices delivers high-quality detection in the infrared

DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates

Deep traps in In0.3Ga0.7As nFinFETs, studied by generation-recombination noise

Deep-level transient spectroscopy of GaAs nanoridge diodes grown on Si substrates

Degradation Mechanisms of Monolithic GaAs-on-Si Nano-Ridge Quantum Well Lasers

Direct three-dimensional observation of the conduction in poly-Si and In1-xGaxAs 3D NAND vertical channels