Browsing by Author "Kwong, D.L."

Now showing 1 - 6 of 6

High performance & CMOS integration friendly dual metal gate MOSFETs using TaN/Ru or TaN/W/Ru stacking multi-layers on HfLaO gate dielectric

Wang, X.P.
;
Li, M.F.
;
Yu, HongYu
;
Yang, J.J.
;
Loh, W.Y.
;
Zhu, C.X.
;
Du, A.Y.
;
Trigg, A.D.
;
Zhang, G.
Proceedings paper
2007, International Conference on Solid State Devices and Materials - SSDM, 18/09/2006
Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process

Kang, JinFeng
;
Yu, HongYu
;
Ren, C.
;
Wang, X.P.
;
Li, M.F.
;
Chan, D.S.H.
;
Yeo, Y.C.
;
Sa, N.
;
Yang, H.
Journal article
2005-04, IEEE Electron Device Letters, (4) 26, p.237-239
Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge

Yu, HongYu
;
Chen, J.D.
;
Li, M.F.
;
Lee, S.J.
;
Kwong, D.L.
;
van Dal, Marc
;
Kittl, Jorge
;
Lauwers, Anne
Proceedings paper
2005, Technical Digest International Electron Device Meeting (IEDM), 5/12/2005, p.27/03/2001-27/03/2004
Scalability and reliability of TaN/HfN/HfO2 gate stack fabricated by a high temperature process

Kang, JinFeng
;
Yu, HongYu
;
Ren, C.
;
Yang, H.
;
Sa, N.
;
Liu, X.Y.
;
Han, R.Q.
;
Li, M.F.
;
Chan, D.S.H.
Proceedings paper
2005, Proceedings of the 35th European Solid-State Device Research Conference - ESSDERC, p.375-378
Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

Wang, X.P.
;
Li, M.F.
;
Yu, HongYu
;
Yang, J.J.
;
Chen, J.D.
;
Zhu, C.X.
;
Du, A.Y.
;
Loh, W.Y.
Journal article
2008, IEEE Electron Device Letters, (29) 1, p.50-53
Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices

Wang, X.P.
;
Lim, A.E.J.
;
Yu, HongYu
;
Li, M.F.
;
Ren, C.
;
Loh, W.Y.
;
Zhu, C.X
;
Chin, A.
;
Trigg, A.D.
Journal article
2007, IEEE Trans. Electron Devices, (54) 11, p.2871-2877