Browsing by Author "Lambert, U."
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Publication Correlation between grown-in silicon substrate defects and silicon gate oxide breakdown characteristics
Meeting abstract1996, Belgische Natuurkundige Vereniging. Algemene Wetenschappelijke Vergadering, 6/06/1996Publication Defects in As-grown silicon and their evolution during heat treatments
;Vanhellemont, Jan ;Dornberger, E. ;Esfandyari, J. ;Kissinger, G.Trauwaert, Marie-AstridProceedings paper1997, Defects in Semiconductors 19 - ICDS 19, 21/07/1997, p.341-6Publication Differential interference contrast microscopy of defects in As-grown and annealed Si wafers
Proceedings paper1997, Proceedings of the 7th International Autumn Meeting : Gettering and Defect Engineering in Semiconductor Technology - GADEST '97, 5/10/1997, p.387-392Publication Grown-in defect density spectra in czochralski silicon wafers
;Kissinger, G. ;Gräf, D. ;Lambert, U. ;Vanhellemont, JanRichter, H.Oral presentation1996, 2nd International Symposium on Advanced Science and Technology of Silicon MaterialsPublication Lattice defects in high quality as-grown CZ silicon, studied with light scattering and preferential etching techniques
;Vanhellemont, Jan ;Kissinger, G. ;Gräf, D.; ;Depas, Michel; Lambert, U.Proceedings paper1995, Proceedings 18th International Conference on Defects in Semiconductors - ICDS-18; July 23 -28, 1995; Sendai, Japan., 23/07/1995, p.1755-1760Publication Light scattering tomography study of lattice defects in high quality as-grown Cz silicon wafers and their evolution during gate oxidation
;Vanhellemont, Jan ;Kissinger, G. ;Gräf, D.; ;Depas, Michel; Lambert, U.Proceedings paper1996, Defect Recognition and Image Processing in Semiconductors - DRIP. Proceedings of the 6th International Conference, 3/12/1995, p.331-336Publication Measurement, modelling and simulation of defects in as-grown Czrochalski silicon
;Vanhellemont, Jan ;Senkader, S. ;Kissinger, G. ;Higgs, V. ;Trauwaert, Marie-AstridGraef, D.Journal article1997, Journal of Crystal Growth, (180) 3_4, p.353-62Publication On the impact of grown-in silicon oxide precipitate nuclei on silicon gate oxide integrity
Proceedings paper1996, Early Stages of Oxygen Precipitation in Silicon; NATO Advanced Research Workshop on Early Stages of Oxygen Precipitation in Sili, 26/03/1996, p.493-500Publication On the impact of grown-in substrate defects and iron contamination on gate oxide integrity
Proceedings paper1996, Proceedings of the 3rd International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS, 23/09/1996, p.313-316Publication On the nature of grown-in defects in silicon: dependence on pulling conditions and evolution during treatments
;Vanhellemont, Jan ;Kissinger, G. ;Senkader, S. ;Gräf, D.; ;Depas, MichelLambert, U.Proceedings paper1996, Proceedings of the 4th International Symposium on High Purity Silicon, 6/10/1996, p.226-237