Browsing by Author "Lauwers, A."
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Publication A low thermal budget pre metal dielectric stack using PECVD and HDP processing
Oral presentation2001, 7th International Dielectrics & Conductors for ULSI Multilevel Interconnection Conference (DCMIC) and ExhibitionPublication A manufacturable process to improve thermal stability of 0.25-µm cobalt silicided poly gate
Journal article1995, IEEE Trans. Semiconductor Manufacturing, (8) 4, p.449-451Publication A reliability study of titanium silicide lines using micro-Raman spectroscopy and electron microscopy
Proceedings paper1997, Proceedings of 8th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 97; October 1997., p.1591-1594Publication A reliability study of titanium silicide lines using micro-raman spectroscopy and electron microscopy
Journal article1997, Microelectronics and Reliability, (37) 10_11, p.1591-1594Publication Comparative study of Ni-silicide and Co-silicide for sub 0.25 μm technologies
Oral presentation1999, European Workshop Materials for Advanced Metallization; March 8-10, 1999; Oostende, Belgium.Publication Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies
Journal article2000, Microelectronic Engineering, (50) 1_4, p.103-116Publication Effect of implantation oxide on the silicidation of narrow diffused and poly-lines
Oral presentation1997, Materials Research Society 1997 Spring Meeting : Symposium on Multilevel Metal Process Integration; April 1-2, 1997; San FrancisPublication Electrical performance and scalability of Ni-monosilicide towards sub 0.13 μm technologies
Oral presentation2001, Symposium K of the MRS Spring Meeting: Gate Stack and Silicide Issues in Si Processing II; 16-20 April 2001; San Francisco, CA,Publication Electrical transport in (100)CoSi2/Si contacts
Journal article1995, J. Appl. Phys., (77) 6, p.2525-36Publication Electronic Transport in Metallic Iron Disilicide
; Van Rossum, MarcJournal article1994, Phys. Rev. B, 50, p.14200-14211Publication Growth of epitaxial b-FeSi2 on (100) silicon using Fe-Ti-Si diffusion couples
Journal article1995, J. Appl. Phys., (78) 1, p.599-601Publication In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines
; ; Van Landuyt, J.Journal article2001, Journal of Applied Physics, (90) 1, p.167-174Publication In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates
Journal article2001, Journal of Materials Research, (16) 3, p.701-708Publication L-shape spacer architecture for low cost, high performance CMOS
Publication Materials aspects, electrical performance, and scalability of Ni-silicide towards sub-0.13μm technologies
Journal article2001, Journal of Vacuum Science & Technology B, (19) 6, p.2026-2037Publication Optimized thermal processing for Ti-Capped CoSi2 for 0.13 μm technology
Journal article2001, Microelectronic Engineering, (55) 1_4, p.157-162Publication Optimized thermal processing for Ti-capped CoSi2 for 0.13μm technology
Oral presentation2000, Materials for Advanced Metallization Conference - MAM; February 28 - March 1, 2000; Stresa, Italy.Publication Orientation-dependent stress build-up during the formation of epitaxial CoSi2
Journal article2001, Microelectronic Engineering, (55) 1_4, p.145-150Publication Self-aligned CoSi2 for 0.18mm and below
; ; ; Steegen, AnJournal article1999, IEEE Trans. Electron Devices, (46) 7, p.1545-1550Publication Silicide induced pattern density and orientation dependent transconductance in MOS transistors
Proceedings paper1999, International Electron Devices Meeting. Technical digest; 5-8 Dec. 1999; Washington, D.C., USA., p.497-500