Browsing by Author "Lavizzari, Simone"
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Publication Copper oxide direct bonding of 200 mm CMOS wafers with five metal levels and TSVs: morphological and electrical characterization
; ; ; ; Guerrieri, StefanoProceedings paper2016, Processing Materials of 3D Interconnects, Damascene and Electronics Packaging 8, 2/10/2016, p.43-46Publication First demonstration of vertically stacked ferroelectric Al doped HfO2 devices for NAND applications
Proceedings paper2017, Symposium on VLSI Technology, 5/06/2017, p.158-159Publication From planar to vertical capacitors : a first step towards ferroelectric V-FeFET integration
Proceedings paper2017, 47th European Solid-State Device Research Conference - ESSDERC, 11/09/2017, p.164-167Publication Impact of top and bottom conductive lyers on electrical and material properties of ferroelectric aluminum doped HfO2
Meeting abstract2016, 47th IEEE Semiconductor Interface Specialists Conference, 8/12/2016Publication In depth analysis of 3D NAND enablers in gate stack integration and demonstration in 3D devices
Proceedings paper2017, International Memory Workshop, 14/05/2017, p.1-4Publication Investigation of the endurance of FE-HfO2 devices by means of TDDB studies
Proceedings paper2018, IEEE International Reliability Physics Symposium - IRPS, 11/03/2018, p.6D.3-1-6D.3-7Publication Reliability study of ferroelectric Al:HfO2 thin films for DRAM and NAND applications
Journal article2017, IEEE Transactions on Electron Devices, (64) 10, p.4091-4098Publication Specification of trace metal contamination for image sensors
Proceedings paper2016, Ultra Clean Processing of Semiconductor Surfaces XIII - UCPSS, 12/09/2016, p.309-312Publication The flexoelectric effect in Al-doped hafnium oxide
Journal article2018, Nanoscale, (10) 18, p.8471-8476Publication Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications
Journal article2017, Journal of Applied Physics, (121) 20, p.204103Publication Vertical ferroelectric HfO2 FET based on 3-D NAND architecture: towards dense low-power memory
Proceedings paper2018, IEEE International Electron Devices Meeting - IEDM, 1/12/2018, p.43-46