Browsing by Author "Leadley, D.R."
Now showing 1 - 5 of 5
- Results per page
- Sort Options
Publication Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs
Journal article2011, IEEE Electron Device Letters, (32) 1, p.87-89Publication Low-frequency noise in strained and relaxed Ge pMOSFETs
Proceedings paper2010, International Conference on Solid-State and Integrated Circuit Technology, 1/11/2010Publication TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology
Publication TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology
Publication The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal
Proceedings paper2008, 9th International Conference on Ultimate Integration of Silicon - ULIS, 12/03/2008, p.19-22