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Browsing by Author "Lee, Hean-Cheal"

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    A study of gate oxide damage due to the plasma etching process on sub-0.25μm technology

    Lee, Hean-Cheal
    PHD thesis
    1999-12
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    Comparative study of porous SOG films with different non-destructive instrumentation

    Baklanov, Mikhaïl
    ;
    Kondoh, Eiichi
    ;
    Linskens, Frank
    ;
    Gidley, D. W.
    ;
    Lee, Hean-Cheal
    Proceedings paper
    2001, Proceedings of the IEEE 2001 International Interconnect Technology Conference, 4/06/2001, p.189-191
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    Plasma process induced physical damage on ultra thin gate oxide

    Lee, Hean-Cheal
    ;
    Vanhaelemeersch, Serge  
    Oral presentation
    1998, Plasma Processing XII; 4-8 May 1998; San Diego, CA, USA.
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    Reduction of plasma process induced damage during gate poly etching by using the SiO2 hard maks

    Lee, Hean-Cheal
    ;
    Creusen, Martin
    ;
    Groeseneken, Guido  
    ;
    Vanhaelemeersch, Serge  
    Proceedings paper
    1998, Proceedings of the 3rd International Symposium on Plasma-Induced Damage - P2ID, 4/06/1998, p.72-75
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    The effect of plasma damage and different annealing ambients on the generation of latent interface states

    Creusen, Martin
    ;
    Lee, Hean-Cheal
    ;
    Vanhaelemeersch, Serge  
    ;
    Groeseneken, Guido  
    Proceedings paper
    1998, Proceedings of the 3rd International Symposium on Plasma-Induced Damage - P2ID, 4/06/1998, p.217-220
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    The etching behavior of tungsten (w) with respect to the orientation of the grain boudnary and masking layers

    Vanhaelemeersch, Serge  
    ;
    Van den hove, Luc  
    ;
    Lee, Hean-Cheal
    Oral presentation
    1997, Materials Research Society 1997 Spring Meeting : Symposium on Multilevel Metal Process Integration; April 1-2, 1997; San Francis
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    The etching behavior of tungsten (W) with respect to the orientation of the grain boundary and masking layers

    Lee, Hean-Cheal
    ;
    Vanhaelemeersch, Serge  
    Journal article
    1998, Thin Solid Films, (320) 1, p.147-150

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