Browsing by Author "Libezny, Milan"
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Publication Analysis of selectively grown epitaxial Si1-xGex by spectroscopic ellipsometry and comparison with other established techniques
Journal article2000, Journal of the Electrochemical Society, (147) 2, p.751-755Publication Analysis of selectively grown epitaxial Si1-xGex by spectroscopic ellipsometry and comparison with RBS and SIMS
Proceedings paper1999, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes, 16/09/1999, p.170-179Publication b-FeSi2/Heterojunction properties and their depedence on the b-FeSi2 preparation method
Proceedings paper1995, 13th European Photovoltaic Solar Energy Conference and Exhibition. Proceedings of the International Conference, 23/10/1995, p.1326-9Publication Comparison of bulk and surface passivation properties of plasma nitrides on Si and SiGe solar cells
Publication Ellipsometric Determination of the Optical Properties of b-FeSi2
Oral presentation1995, WISE: Workshop International on Spectroscopic Ellipsometry; February 9-11, 1995; Erlangen, Germany.Publication Impact of oxygen related extended defects on silicon diode characteristics
Journal article1995, J. Appl. Phys., (77) 11, p.5669-76Publication Infrared studies of oxygen precipitation related defects in silicon after various thermal treatments
Publication Low temperature selective growth of epitaxial Si and Si1-xGex layers from SiH4 and GeH4 in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor: kinetics and possibilities
Journal article1994, Thin Solid Films, (241) 1_2, p.324-328Publication Low-temperature passivation for SiGe-alloy solar cells
Proceedings paper1997, 14th European Photovoltaic Solar Energy Conference and Exhibition. Proceedings of the International Conference, 30/06/1997, p.986-991Publication Morphologies and growth modes of FeSi and beta-FeSi2 layers prepared by rapid thermal annealing
Proceedings paper1996, Silicide Thin Films - Fabrication, Properties, and Applications, 27/11/1995, p.373-378Publication On the recombination activity of oxygen precipitation related lattice defects in silicon
Proceedings paper1995, Defect- and Impurity-Engineered Semiconductors and Devices, 17/04/1995, p.35-40Publication On the relation between low-temperature epitaxial growth conditions and the surface morphology of epitaxial Si and Si1-xGex layers, grown in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor
; ; ; Publication Optical and electrical studies of silicon-based semiconductors: Si1-x and b-FeSi2
Libezny, MilanPHD thesis1996-07Publication Photoluminescence determination of the Fermi energy in heavily doped strained Si1-xGex layers
Journal article1994, Applied Physics Letters, 64, p.1953-1955Publication PL study of oxygen related defects in silicon
Publication RTA-preparation of b-FeSi2 layers from MBE-grown FeSi films deposited on SiGe(100) substrates
Proceedings paper1995, Rapid Thermal and Integrated Processing IV, 17/04/1995, p.407-412Publication Simulation of SiGe solar cells with optical confinement and dark current reduction
Proceedings paper1997, 14th European Photovoltaic Solar Energy Conference and Exhibition. Proceedings of the International Conference, 30/06/1997, p.88-91Publication Single Wavelength and Spectroscopic Ellipsometry Characterization of Ultra-Thin Gate Oxides on Silicon and Comparison with Electrical Results
Oral presentation1995, WISE: Workshop International on Spectroscopic Ellipsometry; February 9-11, 1995; Erlangen, Germany.Publication Solar cell preparation in thin silicon membranes
Proceedings paper1997, 26th IEEE Photovoltaic Specialists Conference, 30/09/1997, p.271-274Publication Spectroellipsometric characterisation of thin epitaxial Si1-x Gex layers
Journal article1995, Materials Science and Technology, (11) 10, p.1065-1070