Browsing by Author "Ma, Jigang"

A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs

Advanced a-VMCO resistive switching memory through inner interface engineering with wide (>10²) on/off window, tunable μA-range switching current and excellent variability

Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement

Investigation of preexisting and generated defects in nonfilamentary a-Si/TiO2 RRAM and their impacts on RTN amplitude distribution

Probing the critical region of conductive filament in nanoscale hafnium-oxide resistive-switching device by random telegraph signals

Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation

RTN-based defect tracking technique: experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2 RRAM switching operation and failure mechanism

TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device