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Browsing by Author "Mack, P."

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    HfSiO(N) composition depth profiling: can we get a quantitative answer using SIMS?

    Conard, Thierry  
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    Chen, Ping
    ;
    Janssens, Tom
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    Brijs, Bert
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    Vandervorst, Wilfried  
    Proceedings paper
    2005, SIMS XV - 15th International Conference on Secondary Ion Mass Spectrometry, 12/09/2005
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    Multitechnique characterisation of Al203 thin layers deposited on SiO2/Si surface by atomic layer chemical vapour deposition

    Houssiau, L.
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    Vitchev, R.G.
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    Pireaux, J.J.
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    Conard, Thierry  
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    Bender, Hugo  
    ;
    Richard, Olivier  
    Proceedings paper
    2003, AVS 4th International Conference on Microelectronics and Interfaces - ICMI, 3/03/2003, p.36-38
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    Nitrogen profiling in high-k layers has much to gain from a combined TOFSIMS-Angle resolved XPS combined study

    Conard, Thierry  
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    Vandervorst, Wilfried  
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    Brijs, Bert
    ;
    Mack, P.
    Proceedings paper
    2005, SIMS XV - 15th International Conference on Secondary Ion Mass Spectrometry, 12/09/2005
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    Physical characterization of mixed HfAlOx layers by complementary analysis techniques

    Bender, Hugo  
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    Conard, Thierry  
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    Richard, Olivier  
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    Brijs, Bert
    ;
    Petry, Jasmine
    Journal article
    2004, Materials Science and Engineering B, 109, p.60-63
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    Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

    Bender, Hugo  
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    Conard, Thierry  
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    Richard, Olivier  
    ;
    Brijs, Bert
    ;
    Petry, Jasmine
    Proceedings paper
    2003, Analytical Techniques for Semiconductor Materials and Processes, 27/04/2003, p.223-232

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