Browsing by Author "Martino, Joao A."

Advantages of different source/drain engineering on scaled UTBOX FD SOI nMOSFETs at high temperature operation

Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures

Analog performance of standard and uinaxial strained triple-gate SOI FinFET under X-ray radiation

Analysis of analog parameters on in NW-TFETs with Si and SiGe source composition for at high temperatures

Analysis of carrier mobility in triple gate SOI nFinFET combining rotated substrate and strain

Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures

Analysis of the ZTC-Point for Vertically Stacked Nanosheet pMOS Devices

Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices

Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 degrees C

DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures

Enhanced dynamic threshold voltage UTBB SOI nMOSFETs

Enhanced model for ZTC in irradiated and strained pFinFET

Experimental Analysis of Trade-Off Between Transistor Efficiency and Unit Gain Frequency of Nanosheet NMOS Transistors

Experimental comparison between relaxed and strained Ge pFinFETs

Gate induced floating body effect behavior in uniaxially strained SOI nMOSFETs

Gateless 1T-DRAM on n-channel bulk FinFETs

High Temperature Influence on the Trade-off between gm/I-D and f(T) of nanosheet NMOS Transistors with Different Metal Gate Stack

Impact of gate current on the operational transconductance amplifier designed with nanowire TFETs

Impact of the NW-TFET diameter on the efficiency and the intrinsic voltage gain from a conduction regime perspective

Influence of different UTBB SOI technologies on analog parameters