Browsing by Author "Medjdoub, Farid"

A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation

Enhancement of GaN-based device robustness by means of in-situ SiN cap layer

Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C

Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C

GaN-on-Si for power conversion

GaN-on-Si HEMT stress under high electric field condition

GaN-on-Si HEMT stress under high electric field condition

GaN-on-Si HEMTs Above 10 W/mm at 2 GHz together with high thermal stability at 325°C

GaN-on-Si power field effect transistors

High temperature on- and off-state stress of GaN-on- Si HEMTs with in-situ Si3N4 cap layer

Influence of thermal anneal steps on the current collapse of Fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs

Is GaN-on-Si HEMT technology suitable for space applications?

Low leakage high breakdown E-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4

Low on-resistance high-breakdown normally off AlN/GaN/AlGaN DHFET on Si substrate

Novel E-mode GaN-on-Si MOSHEMT using a selective thermal oxidation

Preliminary reliability assessment of GaN-on-Si HEMT using in-situ Si3N4 cap layer

Preliminary reliability at 50 V of State-of-the-art RF power GaN-on-Si HEMTs

Thermal stability enhancement of GaN-based devices: towards highly reliable MOSHEMT

Towards High Performance E-Mode InAIN/GaN HEMTs