Browsing by Author "Mehta, Anshu"
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Publication A 10 μm thick poly-SiGe gyroscope processed above 0.35 μm CMOS
Publication Determination of stress profile and optimization of stress gradient in PECVD poly-SiGe films
Publication Novel high growth rate processes for depositing poly-SiGe structural layers at CMOS compatible temperatures
Proceedings paper2004-01, 17th IEEE International Conference in Micro Electro Mechanical Systems - MEMS, 25/01/2004, p.721-724Publication Optimisation of PECVD poly-SiGe layers for MEMS post-processing on top of CMOS
Proceedings paper2005, Proceedings 13th International Conference on Solid State Sensors, Actuators and Microsystems - TRANSDUCERS, 5/06/2005, p.1326-1329Publication Poly-SiGe, a superb material for MEMS
Proceedings paper2004, Micro- and Nanosystems, 1/12/2003, p.25-36Publication Processing of MEMS gyroscopes on top of CMOS ICs
Proceedings paper2005-02, Proceedings International Solid-State Circuits Conference - ISSCC, 6/02/2005, p.88-89Publication SIGEM, low temperature deposition of poly-SiGe MEMs structures on standard CMOS circuits
Publication The use of functionally graded poly-SiGe layers for MEMS applications