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Browsing by Author "Mogilnikov, K. P."

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    Calculation of pore size distribution in the ellipsometric porosimetry: method and reliability

    Mogilnikov, K. P.
    ;
    Polovinkin, V. G.
    ;
    Dultsev, F. N.
    ;
    Baklanov, Mikhaïl
    Proceedings paper
    2000, Low-Dielectric Constant Materials V; 5-9 April 1999; San Francisco, Ca, USA., p.81-86
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    Characterisation of porous dielectric films by ellipsometric porosimetry

    Baklanov, Mikhaïl
    ;
    Mogilnikov, K. P.
    Journal article
    2000, Optica Applicata, (30) 4, p.491-496
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    Characterisation of porous low dielectric constant films by ellipsometric porosimetry

    Baklanov, Mikhaïl
    ;
    Mogilnikov, K. P.
    Journal article
    2001, Semiconductor Fabtech, 14, p.219-221
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    Characterization of low-k dielectric films by ellipsometric porosimetry

    Baklanov, Mikhaïl
    ;
    Mogilnikov, K. P.
    Oral presentation
    2000, MRS Spring Meeting 2000. Symposium D: Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics
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    Characterization of low-k dielectric films by ellipsometric porosimetry

    Baklanov, Mikhaïl
    ;
    Mogilnikov, K. P.
    Proceedings paper
    2001, Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics, 23/04/2000, p.D4.2.1-D4.2.12
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    Comparative study of porous SOG films with different non-destructive instrumentation

    Baklanov, Mikhaïl
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    Kondoh, Eiichi
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    Linskens, Frank
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    Gidley, D. W.
    ;
    Lee, Hean-Cheal
    Proceedings paper
    2001, Proceedings of the IEEE 2001 International Interconnect Technology Conference, 4/06/2001, p.189-191
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    Comparison of techniques to characterise the density, porosity and elastic modulus of porous low-K SiO2 xerogel films

    Murray, C.
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    Flannery, C.
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    Streiter, I.
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    Schulz, S. E.
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    Baklanov, Mikhaïl
    ;
    Mogilnikov, K. P.
    Journal article
    2002, Microelectronic Engineering, (60) 1_2, p.133-141
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    Comparison of techniques to characterize the density, porosity and elastic modules of porous low-k SiO2 xerogel films

    Murray, C.
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    Flannery, C.
    ;
    Streiter, I.
    ;
    Schulz, S. E.
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    Baklanov, Mikhaïl
    ;
    Mogilnikov, K. P.
    Oral presentation
    2001, MAM - European Workshop on Materials for Advanced Metallization; 5-7 March 2001; Sigtuna, Sweden.
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    Determination of pore size distribution in thin films by ellipsometric posimetry

    Baklanov, Mikhaïl
    ;
    Mogilnikov, K. P.
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    Polovinkin, V. G.
    ;
    Dultsev, F. N.
    Journal article
    2000, J. Vacuum Science and Technology B, (18) 3, p.1385-1391
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    Development of a non-destructive thin film porosimetry: pore size distribution and pore volume of porous silica

    Baklanov, Mikhaïl
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    Dultsev, F. N.
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    Kondoh, Eiichi
    ;
    Mogilnikov, K. P.
    ;
    Maex, Karen  
    ;
    Wang, Sharon
    Proceedings paper
    1999, Advanced Metallization Conference in 1998. Proceedings of the Conference;, p.507-512
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    Ellipsometric study of the change in the porosity of silica xerogels after surface chemical modification with hexamethyldisilizane

    Himcinschi, C.
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    Friedrich, M.
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    Frühauf, S.
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    Streiter, I.
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    Schulz, S. E.
    ;
    Gessner, T.
    Oral presentation
    2001, 11. Tagung Festkörperanalytik. 11th Conference on Solid State Analytics; 25-28 June 2001; Chemnitz.
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    Non-destructive characterisation of porosity and pore size distribution in porous low-k dielectric films

    Baklanov, Mikhaïl
    ;
    Mogilnikov, K. P.
    Proceedings paper
    2001, ICSICT - 6th International Conference on Solid-State Integrated Circuit Technology. Proceedings, 22/10/2001, p.352-357
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    Non-destructive determination of pore size distribution of low-k porous SOG films

    Baklanov, Mikhaïl
    ;
    Kondoh, Eiichi
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    Gidley, D.
    ;
    Lin, E.
    ;
    Wu, Wen
    ;
    Arao, H.
    ;
    Mogilnikov, K. P.
    Oral presentation
    2000, 60th Japan Society of Applied Physics Autumn Meeting; September 2000; Japan.

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