Browsing by Author "Nakabayashi, Takashi"
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Publication Defect profiling and the role of nitrogen in lanthanum oxide-capped high-k dielectrics for nMOS applications
Proceedings paper2008-09, International Conference on Solid State Devices and Materials - SSDM, 24/09/2008, p.680-681Publication Development of ALD HfZrOx with TDEAH, TDEAZ and H2O
Proceedings paper2010, China Semiconductor Technology International Conference - CSTIC, 18/03/2010, p.699-704Publication Development of ALD HfZrOx with TDEAH/TDEAZ and H2O
Journal article2011, Journal of the Electrochemical Society, (158) 1, p.H69-H74Publication Quantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics
Journal article2009, Journal of Applied Physics, (106) 11, p.114504Publication Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes
Journal article2008, Journal of Applied Physics, (104) 4, p.44500Publication Work-function engineering for 32nm node pMOS devices: high-performance TaCNO-gated films
Journal article2008, IEEE Electron Device Letters, (29) 11, p.1203-1205