Browsing by Author "Neuilly, Francois"
Now showing 1 - 5 of 5
- Results Per Page
- Sort Options
Publication A novel isolation scheme featuring cavities in the collector for a high-speed 0.13μm SiGe:C BiCMOS technology
Proceedings paper2007, Silicon Monolithic Integrated Circuits in RF Systems Topical Meeting, 10/01/2007, p.158-161Publication Demonstration of asymmetric gate-oxide thickness four-terminal FinFETs having flexible threshold voltage and good subthreshold slope
Journal article2007-03, IEEE Electron Device Letters, (28) 3, p.217-219Publication Independent double-gate FinFets with asymmetric gate stacks
Journal article2007, Microelectronic Engineering, (84) 9_10, p.2097-2100Publication Integration challenges for multi-gate devices
Proceedings paper2005, Proceedings International Conference on IC Design and Technology - ICICDT, 9/05/2005, p.187-194Publication Tall triple-gate device with TiN/HfO2 gate stack
Proceedings paper2005, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2005, p.108-109