Browsing by Author "Nguyen, Duy"
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Publication 200mm Si/SiGe resonant interband tunneling diodes incorporating delta-doping layers grown by CVD
; Publication A 35nm diameter vertical silicon nanowire short-gate tunnelFET
Proceedings paper2009, Nanotechnology Workshop, 13/06/2009Publication A 400GHz fMAX fully self-aligned SiGe:C HBT architecture
Proceedings paper2009-10, IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 13/10/2009, p.5-8Publication Analysis of the time-dependent electrical current in reverse-biased p-GeSn/n-Ge mesa diodes
Meeting abstract2015-09, E-MRS Fall Symposium O: Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques and Appl., 14/09/2015Publication Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy
Oral presentation2011, 7th International Conference on Si Epitaxy and Heterostructures - ICSI-7Publication Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition
Journal article2012, Thin Solid Films, (520) 8, p.3345-3348Publication Atomic layer doping of phosphorus and arsenic: experimental and atomistic modeling
Proceedings paper2008, 4th International Workshop on New Group IV Semiconductor Nanoelectronics, 25/09/2008Publication Composition and thickness dependence of GeSn growth by chemical vapor deposition
Publication Conformal doping of FINFET's: a fabrication and metrology challenge
Meeting abstract2008, E-MRS Symposium I: Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices, 26/05/2008Publication Conformal ultra shallow junctions by vapor phase doping with boron
Proceedings paper2008-05, 4th International SiGe Technology and Device Meeting - ISTDM, 11/05/2008, p.229-230Publication Depth resolution and surface transients in crystalline Silicon at ultra low energies
Meeting abstract2009-09, 17th International Conference on Secondary Ion Mass Spectrometry - SIMS XVII, 14/08/2009, p.247Publication Determination of charge-carrier transport in organic devices by admittance spectroscopy: Application to hole mobility in a-NPD
Publication Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes
Journal article2015, Solid-State Electronics, 110, p.65-70Publication Enhancement of the relaxation of SiGe layers by He ion implantation using a delta-Si:C layer
Oral presentation2007, MRS 2007 Spring Meeting Symposium F: Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices IIPublication Epitaxial Si, SiGe and Ge for high-performance devices
Oral presentation2010, ASM User MeetingPublication Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility
Publication Growth of high quality InP layers in STI trenches on miscut Si (001) substrates
; ; ; Journal article2011, Journal of Crystal Growth, (315) 1, p.32-36Publication Growth of high quality InP layers in STI trenches on Si (001) substrates
Meeting abstract2010, 15th International Conference on Metal Organic Vapor Phase Epitaxy - MOVPE, 23/05/2010Publication Growth of III/V materials on large area silicon
Publication Heterogeneous integration and fabrication of III-V MOS devices in a 200mm processing environment
; ; ; ; Proceedings paper2011, Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3, 1/05/2011, p.299-309
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