Browsing by Author "Nishimura, T."
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Publication Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Meeting abstract2010, 218th ECS Meeting, 10/10/2010, p.1909Publication Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Journal article2011, Microelectronic Engineering, (88) 4, p.342-346Publication Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Meeting abstract2010, E-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of III-V Materials, 7/06/2010Publication Formation of Ni(Ge1-ySny)/Ge1-xSnx/Ge contact for Ge1-xSnx source/drain Stressor
Oral presentation2010, 10th Chubu - Local Meeting of The Surface Science Society of JapanPublication Ge1-xSnx stressors for strained-Ge CMOS
Journal article2011, Solid-State Electronics, (60) 1, p.53-57