Browsing by Author "Oliveira, Alberto"
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Publication Device-based threading dislocation assessment in germanium hetero-epitaxy
Proceedings paper2019, SBMICRO 2019, 26/08/2019Publication Experimental comparison between relaxed and strained Ge pFinFETs
Proceedings paper2017, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS, 3/04/2017, p.180-183Publication Generation-recombination noise in advanced CMOS devices
Proceedings paper2016, 14th Symposium on High Purity and High Mobility Semiconductors, 2/10/2016, p.111-120Publication High lateral electric field impact on the performance of Si-platform-based Ge pFinFETs
Proceedings paper2017, 32nd Symposium on Microelectronics Technology and Devices - SBMicro, 28/08/2017Publication Horizontal, stacked or vertical silicon nanowires: Does it Matter from a Low-Frequency Noise Perspective
Proceedings paper2021, 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 31/03/2020, p.1-6Publication Low temperature effect on strained and relaxed Ge pFinFETs STI last processes
Proceedings paper2016, High Purity and High Mobility Semiconductors 14, 2/10/2016, p.213-218Publication Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs
Proceedings paper2017, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - S3S, 16/10/2017, p.1-3Publication Low-frequency and random telegraph noise performance of Ge-based and III-V devices on a Si platform
Proceedings paper2016, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 25/10/2016, p.288-293Publication Low-frequency noise assessment of different Ge pFinFET STI processes
Journal article2016, IEEE Transactions on Electron Devices, (63) 10, p.4031-4037Publication Low-frequency noise characterization of germanium n-channel finFETs
Journal article2020, IEEE Transactions on Electron Devices, (67) 7, p.2872-2877Publication Low-frequency noise in vertically stacked Si n-channel nanosheet FETs
Journal article2020, IEEE Electron Device Letters, (41) 3, p.317-320Publication Scaled, novel effective workfunction metal gate stacks for advanced Low-VT, gate-all-around vertically stacked nanosheet FETs with reduced vertical distance between sheets
Proceedings paper2019, 2019 International Conference on Solid State Devices and Materials (SSDM 2019), 2/09/2019, p.559-560