Browsing by Author "Paccagnella, Alessandro"
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Publication An insight into the effects induced by heavy-ion strikes in
Oral presentation2011, 5th Annual International Electrostatic Discharge Workshop - IEWPublication Angular and strain dependence of heavy-ions induced degration in SOI FinFETs
Publication Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays
Publication Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays
Publication Multi-gate devices for the 32-nm node and beyond: advantages and issues
Proceedings paper2008, 17th European Workshop on Heterostructure Technology - HETECH, 3/11/2008, p.15-16Publication SiO2/HfO2 MOSFETs after X-rays irradiation: impact on MOSFET performance and interface degradation
Publication TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses
Publication Total-ionizing-dose effects in InGaAs MOSFETs with high-k gate dielectrics and InP substrates
Journal article2020, IEEE Transactions on Nuclear Science, (67) 7, p.1312-1319Publication Total-ionizing-dose effects on InGaAs FinFETs with improved gate stack
Proceedings paper2019, Radiation Effects on Devices & ICs 2019 - RADECS, 16/09/2019Publication Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack
Journal article2020-01, IEEE Transactions on Nuclear Science, (67) 1, p.253-259