Browsing by Author "Porti, Marc"
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Publication A conductive AFM nanoscale analysis of NBTI and channel hot-carriers degradation in MOSFETs
;Wu, Qian ;Bayerl, A. ;Porti, Marc ;Martin-Martinez, Javier ;Lanza, MarioRodiguez, RosannaJournal article2014, IEEE Transactions on Electron Devices, (61) 9, p.3118-3124Publication Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale
;Bayerl, A. ;Porti, Marc ;Martin-Martinez, Javier ;Lanza, M. ;Rodriguez, RosannaVelayudhan, V.Proceedings paper2013, IEEE International Reliability Physics Symposium - IRPS, 14/04/2013, p.5D4.1-5D4.6Publication Channel-hot-carrier degradation of strained MOSFETs: a device level and nanoscale combined approach
;Wu, Qian ;Porti, Marc ;Bayerl, Albin ;Martin-Martinez, JavierRodriguez, RosanaJournal article2015, Journal of Vacuum Science and Technology B, (33) 2, p.22202Publication Comparison of standard macroscopic and Conductive AFM leakage measurements on gate removed high-k capacitors
Oral presentation2008, 15th Workshop on Dielectrics in Microelectronics - WODIMPublication Improved characterization of high-k degradation with vacuum C-AFM
Proceedings paper2008, Synthesis and Metrology of Nanoscale Oxides and Thin Films, 22/03/2008, p.1074-I11-02Publication Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics
;Aguilera, Lidia ;Polspoel, Wouter ;Volodin, Alexander ;Van Haesendonck, ChrisPorti, MarcJournal article2008, Journal of Vacuum Science and Technology B, (26) 4, p.1445-1449Publication Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors
Journal article2008, Microelectronics Reliability, (48) 8_9, p.1521-1524Publication Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors
;Bayerl, Albin ;Lanza, Mario ;Aguilera, Lidia ;Porti, Marc ;Nafria, MontserratAymerich, XavierJournal article2013, Microelectronics Reliability, (53) 6, p.867-871Publication Nanoscale effects of annealing on the electrical characteristic of hafnium based devices measured in a vacuum environment
Proceedings paper2008, IEEE International Reliability Physics Symposium Proceedings - IRPS, 27/04/2008, p.657-658