Browsing by Author "Raskin, Jean-Pierre"

AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates

Anisotropic vapor HF etching of silicon dioxide for Si microstructure release

Band gap reduction in highly-strained silicon beams predicted by first-principles theory and validated using photoluminescence spectroscopy

Band-to-band tunneling MOSCAPs for rapid TFET characterization

CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities

Contribution of Substrate Harmonic Distortion to GaN-on-Si RF Switches Linearity

DC and RF characteristics of a 60-nm FinFET over a wide temperature range

Environmental Analysis of RF Substrates

Extensive Electrical Characterization Methodology of Advanced MOSFETs Towards Analog and RF Applications

FinFETs perspectives for high-temperature applications

Frequency variation of the small-signal output conductance of decananometer MOSFETs due to the substrate crosstalk

GaN-on-Porous Silicon for RF Applications

High-frequency noise performance of 60-nm gate-length FinFETs

Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

Modeling and Characterization of TSV-Induced Noise Coupling

Perspective of FinFETs for analog applications

Revised split C-V technique for mobility investigation in advanced devices

Simulation of the effect of microstructure on the elastic properties of copper interconnects

Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

Time Dependence of RF Losses in GaN-on-Si Substrates