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Browsing by Author "Reed, R.A."

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    Efficient reliability testing of emerging memory technologies using multiple radiation sources

    Bennet, W.G.
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    Hooten, N.C.
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    Weeded-Wright, S.
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    Schrimpf, R.D.
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    Reed, R.A.
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    Alles, M.C.
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    Zhang, E.X.
    Proceedings paper
    2014, 23rd Conference on Application of Accelerators in Research and Industry - CAARI, 25/05/2014, p.1-8
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    Heavy ion and laser induced charge collection in SiGe bulk PMOSFETs

    Zhang, E.X.
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    Samsel, I.K.
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    Hooten, N.C.
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    Bennett, W.G.
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    Funkhouser, E.D.
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    Kai, N.
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    Ball, D.R.
    Proceedings paper
    2014, IEEE Nuclear & Space Radiation Effects Conference - NSREC, 14/07/2014, p.PE-4
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    Heavy ion and laser-induced transients in SiGe channel pMOSFETs

    Zhang, E.X.
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    Samsel, I.K.
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    Bennett, W.G.
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    Hooten, N.C.
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    McCurdy, M.
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    Fleetwood, D.M.
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    Reed, R.A.
    Proceedings paper
    2013, International Semiconductors Device Research Symposium, 11/12/2013, p.FA7-03
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    Heavy-ion-induced current transients in bulk and SOI FinFETs

    El-Mamouni, F.
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    Zhang, X.
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    Ball, D.R.
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    Sierawski, B.
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    King, M.P.
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    Schrimpf, R.D.
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    Reed, R.A.
    Journal article
    2012, IEEE Transactions on Nuclear Science, (59) 6, p.2674-2681
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    Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs

    Mahatme, N.
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    Zhang, E.
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    Reed, R.A.
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    Bhuva, B.L.
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    Schrimpf, R.D.
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    Fleetwood, D.M.
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    Linten, Dimitri  
    Journal article
    2012, IEEE Transactions on Nuclear Science, (59) 6, p.2966-2973
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    Laser- and heavy ion-induced charge collection in bulk FinFETs

    El-Mamouni, F.
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    Zhang, E.X.
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    Pate, N.D.
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    Schrimpf, R.D.
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    Reed, R.A.
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    Galloway, K.F.
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    McMorrow, D.
    Journal article
    2011, IEEE Transactions on Nuclear Science, (58) 6,1, p.2563
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    Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFET devices

    El-Mamouni, F.
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    Zhang, E.X.
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    Schrimpf, R.D.
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    Reed, R.A.
    ;
    Galloway, K.F.
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    McMorrow, D.
    ;
    Simoen, Eddy  
    Proceedings paper
    2011, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.882-885
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    Radiation hardness aspects of advanced FinFET and UTBOX devices

    Claeys, Cor
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    Aoulaiche, Marc
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    Simoen, Eddy  
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    Griffoni, Alessio
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    Kobayashi, D.
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    Mahatme, N.N.
    Proceedings paper
    2012, IEEE International SOI Conference, 1/10/2012, p.3.7
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    TID and displacement damage resilience of 1T1R Hfo2 hf resistive memories

    Weeden-Wright, S.L.
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    Bennett, W.G.
    ;
    Hooten, N.C.
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    Zhang, E.X.
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    McCurdy, M.W.
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    Schrimpf, R.D.
    Journal article
    2014, IEEE Transactions on Nuclear Science, (61) 6, p.2972-2978
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    Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain

    Wang, L.
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    Zhang, E.X.
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    Zhang, C.X.
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    Duan, G.X.
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    Schrimpf, R.D.
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    Fleetwood, D.M.
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    Reed, R.A.
    Proceedings paper
    2015, IEEE Nuclear & Space Radiation Effects Conference - NSREC, 13/07/2015, p.22-25
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    Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics

    Gorchichko, M.
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    Cao, Y.
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    Zhang, E.X.
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    Yan, D.
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    Gong, H.
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    Zhao, S.E.
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    Wang, P.
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    Jiang, R.
    ;
    Liang, C.
    Journal article
    2020, IEEE Transactions on Nuclear Science, (67) 1, p.245-252
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    Total-ionizing-dose effects on ultrathin-body-and-buried- oxide MOSFETs

    Mahatme, Nihaar
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    Zhang, E.X.
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    Linten, Dimitri  
    ;
    Griffoni, A.
    ;
    Aoulaiche, Marc
    ;
    Simoen, Eddy  
    Oral presentation
    2012, IEEE Nuclear and Space Radiation Effects Conference - NSREC

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