Browsing by Author "Reed, R.A."
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Publication Efficient reliability testing of emerging memory technologies using multiple radiation sources
;Bennet, W.G. ;Hooten, N.C. ;Weeded-Wright, S. ;Schrimpf, R.D. ;Reed, R.A. ;Alles, M.C.Zhang, E.X.Proceedings paper2014, 23rd Conference on Application of Accelerators in Research and Industry - CAARI, 25/05/2014, p.1-8Publication Heavy ion and laser induced charge collection in SiGe bulk PMOSFETs
;Zhang, E.X. ;Samsel, I.K. ;Hooten, N.C. ;Bennett, W.G. ;Funkhouser, E.D. ;Kai, N.Ball, D.R.Proceedings paper2014, IEEE Nuclear & Space Radiation Effects Conference - NSREC, 14/07/2014, p.PE-4Publication Heavy ion and laser-induced transients in SiGe channel pMOSFETs
;Zhang, E.X. ;Samsel, I.K. ;Bennett, W.G. ;Hooten, N.C. ;McCurdy, M. ;Fleetwood, D.M.Reed, R.A.Proceedings paper2013, International Semiconductors Device Research Symposium, 11/12/2013, p.FA7-03Publication Heavy-ion-induced current transients in bulk and SOI FinFETs
;El-Mamouni, F. ;Zhang, X. ;Ball, D.R. ;Sierawski, B. ;King, M.P. ;Schrimpf, R.D.Reed, R.A.Journal article2012, IEEE Transactions on Nuclear Science, (59) 6, p.2674-2681Publication Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs
Journal article2012, IEEE Transactions on Nuclear Science, (59) 6, p.2966-2973Publication Laser- and heavy ion-induced charge collection in bulk FinFETs
;El-Mamouni, F. ;Zhang, E.X. ;Pate, N.D. ;Schrimpf, R.D. ;Reed, R.A. ;Galloway, K.F.McMorrow, D.Journal article2011, IEEE Transactions on Nuclear Science, (58) 6,1, p.2563Publication Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFET devices
Proceedings paper2011, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.882-885Publication Radiation hardness aspects of advanced FinFET and UTBOX devices
Proceedings paper2012, IEEE International SOI Conference, 1/10/2012, p.3.7Publication TID and displacement damage resilience of 1T1R Hfo2 hf resistive memories
;Weeden-Wright, S.L. ;Bennett, W.G. ;Hooten, N.C. ;Zhang, E.X. ;McCurdy, M.W.Schrimpf, R.D.Journal article2014, IEEE Transactions on Nuclear Science, (61) 6, p.2972-2978Publication Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain
;Wang, L. ;Zhang, E.X. ;Zhang, C.X. ;Duan, G.X. ;Schrimpf, R.D. ;Fleetwood, D.M.Reed, R.A.Proceedings paper2015, IEEE Nuclear & Space Radiation Effects Conference - NSREC, 13/07/2015, p.22-25Publication Total-ionizing-dose effects and low-frequency noise in 30-nm gate-length Bulk and SOI FinFETs with SiO2/HfO2 gate delectrics
;Gorchichko, M. ;Cao, Y. ;Zhang, E.X. ;Yan, D. ;Gong, H. ;Zhao, S.E. ;Wang, P. ;Jiang, R.Liang, C.Journal article2020, IEEE Transactions on Nuclear Science, (67) 1, p.245-252Publication Total-ionizing-dose effects on ultrathin-body-and-buried- oxide MOSFETs
Oral presentation2012, IEEE Nuclear and Space Radiation Effects Conference - NSREC