Browsing by Author "Ren, C."

Now showing 1 - 5 of 5

High performance & CMOS integration friendly dual metal gate MOSFETs using TaN/Ru or TaN/W/Ru stacking multi-layers on HfLaO gate dielectric

Wang, X.P.
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Li, M.F.
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Yu, HongYu
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Yang, J.J.
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Loh, W.Y.
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Zhu, C.X.
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Du, A.Y.
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Trigg, A.D.
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Zhang, G.
Proceedings paper
2007, International Conference on Solid State Devices and Materials - SSDM, 18/09/2006
Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process

Kang, JinFeng
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Yu, HongYu
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Ren, C.
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Wang, X.P.
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Li, M.F.
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Chan, D.S.H.
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Yeo, Y.C.
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Sa, N.
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Yang, H.
Journal article
2005-04, IEEE Electron Device Letters, (4) 26, p.237-239
Mechanism of positive-bias temperature instability in sub-1 nm TaN/HfN/HfO2 gate stack with low preexisting traps

Sa, N.
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Kang, J.F.
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Yang, H.
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Liu, X.Y.
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He, Y.D.
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Han, R.Q.
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Ren, C.
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Yu, HongYu
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Chan, D.S.H.
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Kwong, D.-L.
Journal article
2005-09, IEEE Electron Device Letters, (9) 26, p.610-612
Scalability and reliability of TaN/HfN/HfO2 gate stack fabricated by a high temperature process

Kang, JinFeng
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Yu, HongYu
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Ren, C.
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Yang, H.
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Sa, N.
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Liu, X.Y.
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Han, R.Q.
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Li, M.F.
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Chan, D.S.H.
Proceedings paper
2005, Proceedings of the 35th European Solid-State Device Research Conference - ESSDERC, p.375-378
Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices

Wang, X.P.
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Lim, A.E.J.
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Yu, HongYu
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Li, M.F.
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Ren, C.
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Loh, W.Y.
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Zhu, C.X
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Chin, A.
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Trigg, A.D.
Journal article
2007, IEEE Trans. Electron Devices, (54) 11, p.2871-2877