Browsing by Author "Rinaudo, Pietro"
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Publication Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements
Journal article2026, IEEE ELECTRON DEVICE LETTERS, (47) 5, p.929-932Publication Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI
Journal article2023, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (23) 3, p.337-345Publication Finite-Element Framework for Electrostatics and Optical Simulations in IGZO TFTs-Part I: Modeling
Journal article2026, IEEE TRANSACTIONS ON ELECTRON DEVICES, (73) 8, p.4537-4544Publication Fundamental understanding of NBTI degradation mechanism in IGZO channel devices
Proceedings paper2024, International Reliability Physics Symposium (IRPS), APR 14-18, 2024Publication Gate oxide reliability: upcoming trends, challenges, and opportunities
Proceedings paper2024, IEEE Silicon Nanoelectronics Workshop (SNW) / Symposium on VLSI Technology and Circuits, 2024-06-15, p.3-4Publication Improving IGZO transistor PBTI reliability with hydrogen anneal achieving overdrive voltage of 1.2V for a lifetime of 5 years at 95°C
Proceedings paper2025, IEEE International Electron Devices Meeting (IEDM), 2025-12-06Publication Light-assisted investigation of the role of oxygen flow during IGZO deposition on deep subgap states and their evolution under PBTI
Proceedings paper2024, International Reliability Physics Symposium (IRPS), APR 14-18, 2024Publication Unraveling BTI in IGZO devices: impact of device architecture, channel film deposition method and stoichiometry/phase, and device operating conditions
Proceedings paper2024, IEEE International Electron Devices Meeting (IEDM), 2024-12-07