Browsing by Author "Roozeboom, F."
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Publication Characterization of thermal and electrical stability of MOCVD HfO2-HfSiO4 dielectric layers with polysilicon electrodes for advanced CMOS technologies
Publication Electrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applications
Proceedings paper2003, 14th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference - ASMC, 31/03/2003, p.133-136Publication High speed atmospheric pressure ALD for industrial scale solar cell passivation
Proceedings paper2010, 25th European Photovoltaic Solar Energy Conference and Exhibition - EPVSEC, 6/09/2010, p.1110-1113Publication Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition
Proceedings paper2002, Semiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology, 12/05/2002, p.747-760Publication Laser annealing for ultra-shallow junction formation in advanced CMOS
Proceedings paper2002, Rapid Thermal And Other Short-Time Processing Technologies III, 12/05/2002, p.413-426Publication Tantalum-based gate electrode metals for advanced CMOS devices
Proceedings paper2005, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 15/05/2005, p.215-224Publication The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer
Proceedings paper2004, High-Mobility Group-IV Materials and Devices, 12/04/2004, p.281-286Publication The role of preamorphization and activation for ultra shallow junction formation on strained Si layers grown on SiGe buffer
Proceedings paper2004, Silicon Front-End Junction Formation - Physics and Technology, 12/04/2004, p.C9.6/B9.6Publication Thermal processing of high-K materials thermodynamics and kinetics
Meeting abstract2002, 201st Meeting of the Electrochemical Society. Rapid Thermal and Other Short Time Processing Technologies III, 12/05/2002, p.715