Browsing by Author "Ryan, Paul"
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Publication Asymmetric relaxation of SiGe in patterned Si line structures
Proceedings paper2007, International Conference on Frontiers of Characterization and Metrology for Nanoelectronics at NIST, 27/03/2007Publication High resolution X-ray diffraction for in-line monitoring of Ge MOSFET devices
Proceedings paper2015, International Conference on Frontiers of Characterization and Metrology for Nanoelectronics - FCMN, 14/04/2015, p.217-219Publication How to Manage My Data? With Machine-Interpretable GDPR Rights!
Proceedings paper2024-01-01, Legal Knowledge and Information Systems, JURIX, 37th Annual Conference, 2024-12-11, p.269-274Publication In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction
Oral presentation2007, 3rd International Workshop on New Group IV Semiconductor NanoelectronicsPublication In-line characterization of heterojunction bipolar transistor base layers by high-resolution X-ray diffraction
Proceedings paper2007, Analytical Techniques for Semiconductor Materials and Process Characterization 5 - ALTECH, 13/09/2007, p.151-160Publication Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures
Journal article2017, Nanotechnology, (28) 14, p.145703Publication Processing technologies for advanced Ge devices
Meeting abstract2016-10, PRiME 2016 - 230th ECS Meeting (Fall) - Electrochemical Society: SiGe, Ge & Related Compounds: Materials, Processing and Devices, 2/10/2016, p.1982Publication Processing technologies for advanced Ge devices
Journal article2017, ECS Journal of Solid State Science and Technology, (6) 1, p.14-20Publication Processing technologies for advanced Ge devices
Proceedings paper2016-09, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7, 2/10/2016, p.491-503Publication Selective-area metal organic vapor-phase epitaxy of InGaAs/InP heterostructures on Si for advanced CMOS devices
Proceedings paper2014, Dielectrics for Nanosystems 6: Materials Science, Processing, Reliability and Manufacturing, 11/05/2014, p.107-112Publication Strain and composition monitoring in various (Si)Ge fin structures using in-line HRXRD
Meeting abstract2017, Frontiers of Characterization and Metrology for Nanoelectronics - FCMN, 21/03/2017Publication Strain and compositional analysis of (Si)Ge fin structures using high resolution X-ray diffraction
Journal article2017, Physica Status Solidi C, (14) 12, p.1700156Publication Use of X-ray techniques in the development and production of novel transistor structures
Proceedings paper2014, 7th International SiGe Technology and Device Meeting - ISTDM, 2/06/2014, p.39-40Publication Use of X-ray techniques in the development of Ge MOSFET devices
Meeting abstract2014, EMRS Fall Meeting, Symposium J: Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques & Appl., 15/09/2014