Browsing by Author "Ryan, Paul"
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Publication Asymmetric relaxation of SiGe in patterned Si line structures
Proceedings paper2007, International Conference on Frontiers of Characterization and Metrology for Nanoelectronics at NIST, 27/03/2007Publication High resolution X-ray diffraction for in-line monitoring of Ge MOSFET devices
Proceedings paper2015, International Conference on Frontiers of Characterization and Metrology for Nanoelectronics - FCMN, 14/04/2015, p.217-219Publication In-line characterization of heterojunction bipolar transistor base layers by high-resolution X-ray diffraction
Proceedings paper2007, Analytical Techniques for Semiconductor Materials and Process Characterization 5 - ALTECH, 13/09/2007, p.151-160Publication In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction
Oral presentation2007, 3rd International Workshop on New Group IV Semiconductor NanoelectronicsPublication Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures
Journal article2017, Nanotechnology, (28) 14, p.145703Publication Processing technologies for advanced Ge devices
Journal article2017, ECS Journal of Solid State Science and Technology, (6) 1, p.14-20Publication Processing technologies for advanced Ge devices
Proceedings paper2016-09, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7, 2/10/2016, p.491-503Publication Processing technologies for advanced Ge devices
Meeting abstract2016-10, PRiME 2016 - 230th ECS Meeting (Fall) - Electrochemical Society: SiGe, Ge & Related Compounds: Materials, Processing and Devices, 2/10/2016, p.1982Publication Selective-area metal organic vapor-phase epitaxy of InGaAs/InP heterostructures on Si for advanced CMOS devices
Proceedings paper2014, Dielectrics for Nanosystems 6: Materials Science, Processing, Reliability and Manufacturing, 11/05/2014, p.107-112Publication Strain and composition monitoring in various (Si)Ge fin structures using in-line HRXRD
Meeting abstract2017, Frontiers of Characterization and Metrology for Nanoelectronics - FCMN, 21/03/2017Publication Strain and compositional analysis of (Si)Ge fin structures using high resolution X-ray diffraction
Journal article2017, Physica Status Solidi C, (14) 12, p.1700156Publication Use of X-ray techniques in the development and production of novel transistor structures
Proceedings paper2014, 7th International SiGe Technology and Device Meeting - ISTDM, 2/06/2014, p.39-40Publication Use of X-ray techniques in the development of Ge MOSFET devices
Meeting abstract2014, EMRS Fall Meeting, Symposium J: Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques & Appl., 15/09/2014