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Browsing by Author "Sakhare, Sushil"

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    A comparative analysis on the impact of bank contention in STT-MRAM and SRAM based LLCs

    Evenblij, Timon  
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    Perumkunnil, Manu  
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    Catthoor, Francky  
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    Sakhare, Sushil
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    Debacker, Peter  
    Proceedings paper
    2019, International Conference on Computer Design - ICCD, 17/11/2019, p.1-9
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    A comprehensive benchmark and optimization of 5-nm lateral and vertical GAA 6T-SRAMs

    Huynh Bao, Trong
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    Sakhare, Sushil
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    Yakimets, Dmitry  
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    Ryckaert, Julien  
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    Thean, Aaron  
    Journal article
    2016, IEEE Transactions on Electron Devices, (63) 2, p.643-651
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    Cross-layer design and analysis of al ow power, high density STT-MRAM for embedded systems

    Perumkunnil, Manu  
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    Sakhare, Sushil
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    Huynh Bao, Trong
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    Rao, Siddharth  
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    Kim, Woojin  
    Proceedings paper
    2017, 2017 IEEE International Symposium of Circuits and Systems - ISCAS, 28/05/2017, p.1-4
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    Design technology co-optimization for a robust 10nm solution for logic design and Sram

    Vandewalle, Boris
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    Chava, Bharani
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    Sakhare, Sushil
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    Ryckaert, Julien  
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    Dusa, Mircea  
    Proceedings paper
    2014, Design-Process-Technology Co-Optimization for Manufacturability VIII, 25/02/2014, p.90530Q
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    Design technology co-optimization for enabling 5nm gate-all-around nanowire 6T SRAM

    Huynh Bao, Trong
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    Sakhare, Sushil
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    Ryckaert, Julien  
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    Yakimets, Dmitry  
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    Mercha, Abdelkarim  
    Proceedings paper
    2015, International Conference on IC Design and Technology - ICICDT, 1/06/2015, p.1-4
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    Design technology co-optimization for N10

    Ryckaert, Julien  
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    Raghavan, Praveen
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    Baert, Rogier  
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    Garcia Bardon, Marie  
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    Dusa, Mircea  
    Proceedings paper
    2014, IEEE Proceedings of the Custom Integrated Circuits Conference - CICC, 15/09/2014, p.1-8
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    Distinctive behavior of perpendicular magnetic tunnel junctions with size comparable to the electrical switching nucleation

    Kim, Woojin  
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    Rao, Siddharth  
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    Van Beek, Simon  
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    Garello, Kevin  
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    Couet, Sebastien  
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    Swerts, Johan  
    Oral presentation
    2017, Intermag 2017
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    Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm node

    Sakhare, Sushil
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    Perumkunnil, Manu  
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    Huynh Bao, Trong
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    Rao, Siddharth  
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    Kim, Woojin  
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    Crotti, Davide  
    Proceedings paper
    2018, IEEE International Electron Devices Meeting - IEDM, 1/12/2018, p.420-423
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    Impact of interconnect multiple-patterning variability on SRAMs

    Karageorgos, Ioannis
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    Dehaene, Wim  
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    Stucchi, Michele  
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    Raghavan, Praveen
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    Ryckaert, Julien  
    Proceedings paper
    2015, Design, Automation & Test in Europe Conference - DATE, 9/03/2015, p.609-612
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    JSWof 5.5 MA/cm2 and RA of 5.2- $X $lm2 STT-MRAM technology for LLC application

    Sakhare, Sushil
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    Rao, Siddharth  
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    Perumkunnil, Manu  
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    Couet, Sebastien  
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    Crotti, Davide  
    Journal article
    2020, IEEE Transactions on Electron Devices, (67) 9, p.3618-3625
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    Layout optimization and trade-off between 193i and EUV-based patterning for SRAM cells to improve performance and process variability at 7nm technology node

    Sakhare, Sushil
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    Trivkovic, Darko  
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    Mountsier, Tom  
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    Kim, Min-Soo  
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    Mocuta, Dan
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    Ryckaert, Julien  
    Proceedings paper
    2015, Design-Process-Technology Co-optimization for Manufacturability IX, 22/02/2015, p.94270O
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    Main memory organization trade-offs with DRAM and STT-MRAM options based on gem5-NVMain simulation frameworks

    Perumkunnil, Manu  
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    Oh, Hyungrock  
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    Hartmann, Matthias  
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    Sakhare, Sushil
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    Tenllado, Christian
    Proceedings paper
    2018, 2018 Design, Automation & Test in Europe Conference & Exhibition - DATE, 19/03/2018, p.103-108
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    Simplistic simulation-based device-VT-targeting technique to determine technology high-density LELE-gate-patterned FinFET SRAM in sub-10 nm era

    Sakhare, Sushil
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    Miyaguchi, Kenichi  
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    Raghavan, Praveen
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    Mercha, Abdelkarim  
    Journal article
    2015, IEEE Transactions on Electron Devices, (62) 6, p.1716-1724
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    Solving the BEOL compatibility challenge of top-pinned magnetic tunnel junction stacks

    Swerts, Johan  
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    Liu, Enlong
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    Couet, Sebastien  
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    Mertens, Sofie  
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    Rao, Siddharth  
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    Kim, Woojin  
    Proceedings paper
    2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.856-859
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    SRAM designs for 5nm node and beyond: opportunities and challenges

    Huynh Bao, Trong
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    Sakhare, Sushil
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    Ryckaert, Julien  
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    Spessot, Alessio  
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    Verkest, Diederik  
    Meeting abstract
    2017, IEEE International Conference on IC Design and Technology - ICICDT, 22/05/2017, p.1-4
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    Switching characteristics of perpendicular magnetic tunnel junction with various sizes

    Kim, Woojin  
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    Rao, Siddharth  
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    Van Beek, Simon  
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    Garello, Kevin  
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    Couet, Sebastien  
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    Swerts, Johan  
    Oral presentation
    2016, International Electron Devices Meeting - IEDM
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    Thermal stability and switching performance metrics of top-pinned STT-MRAM devices with CMOS-compatible dual MgO MTJ stacks

    Rao, Siddharth  
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    Kim, Woojin  
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    Couet, Sebastien  
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    Swerts, Johan  
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    Mertens, Sofie  
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    Lin, Tsann
    Oral presentation
    2017, Intermag 2017
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    Toward the 5nm technology: layout optimization and performance benchmark for logic/SRAMs using lateral and vertical GAA FETs

    Huynh Bao, Trong
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    Ryckaert, Julien  
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    Sakhare, Sushil
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    Mercha, Abdelkarim  
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    Verkest, Diederik  
    Proceedings paper
    2016, Design-Process-Technology Co-optimization for Manufacturability X, 21/02/2016, p.978102
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    Vertical device architecture for 5nm and beyond: device & circuit implications

    Thean, Aaron  
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    Yakimets, Dmitry  
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    Huynh Bao, Trong
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    Schuddinck, Pieter  
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    Sakhare, Sushil
    Proceedings paper
    2015, IEEE Symposium on VLSI Technology, 15/06/2015, p.T26-T27

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