Browsing by Author "Sakhare, Sushil"
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Publication A comparative analysis on the impact of bank contention in STT-MRAM and SRAM based LLCs
Proceedings paper2019, International Conference on Computer Design - ICCD, 17/11/2019, p.1-9Publication A comprehensive benchmark and optimization of 5-nm lateral and vertical GAA 6T-SRAMs
Journal article2016, IEEE Transactions on Electron Devices, (63) 2, p.643-651Publication Cross-layer design and analysis of al ow power, high density STT-MRAM for embedded systems
Proceedings paper2017, 2017 IEEE International Symposium of Circuits and Systems - ISCAS, 28/05/2017, p.1-4Publication Design technology co-optimization for a robust 10nm solution for logic design and Sram
Proceedings paper2014, Design-Process-Technology Co-Optimization for Manufacturability VIII, 25/02/2014, p.90530QPublication Design technology co-optimization for enabling 5nm gate-all-around nanowire 6T SRAM
Proceedings paper2015, International Conference on IC Design and Technology - ICICDT, 1/06/2015, p.1-4Publication Design technology co-optimization for N10
Proceedings paper2014, IEEE Proceedings of the Custom Integrated Circuits Conference - CICC, 15/09/2014, p.1-8Publication Distinctive behavior of perpendicular magnetic tunnel junctions with size comparable to the electrical switching nucleation
Oral presentation2017, Intermag 2017Publication Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm node
;Sakhare, Sushil; ;Huynh Bao, Trong; ; Proceedings paper2018, IEEE International Electron Devices Meeting - IEDM, 1/12/2018, p.420-423Publication Impact of interconnect multiple-patterning variability on SRAMs
Proceedings paper2015, Design, Automation & Test in Europe Conference - DATE, 9/03/2015, p.609-612Publication JSWof 5.5 MA/cm2 and RA of 5.2- $X $lm2 STT-MRAM technology for LLC application
Journal article2020, IEEE Transactions on Electron Devices, (67) 9, p.3618-3625Publication Layout optimization and trade-off between 193i and EUV-based patterning for SRAM cells to improve performance and process variability at 7nm technology node
Proceedings paper2015, Design-Process-Technology Co-optimization for Manufacturability IX, 22/02/2015, p.94270OPublication Main memory organization trade-offs with DRAM and STT-MRAM options based on gem5-NVMain simulation frameworks
Proceedings paper2018, 2018 Design, Automation & Test in Europe Conference & Exhibition - DATE, 19/03/2018, p.103-108Publication Simplistic simulation-based device-VT-targeting technique to determine technology high-density LELE-gate-patterned FinFET SRAM in sub-10 nm era
Journal article2015, IEEE Transactions on Electron Devices, (62) 6, p.1716-1724Publication Solving the BEOL compatibility challenge of top-pinned magnetic tunnel junction stacks
Proceedings paper2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.856-859Publication SRAM designs for 5nm node and beyond: opportunities and challenges
Meeting abstract2017, IEEE International Conference on IC Design and Technology - ICICDT, 22/05/2017, p.1-4Publication Switching characteristics of perpendicular magnetic tunnel junction with various sizes
Oral presentation2016, International Electron Devices Meeting - IEDMPublication Thermal stability and switching performance metrics of top-pinned STT-MRAM devices with CMOS-compatible dual MgO MTJ stacks
Oral presentation2017, Intermag 2017Publication Toward the 5nm technology: layout optimization and performance benchmark for logic/SRAMs using lateral and vertical GAA FETs
Proceedings paper2016, Design-Process-Technology Co-optimization for Manufacturability X, 21/02/2016, p.978102Publication Vertical device architecture for 5nm and beyond: device & circuit implications
Proceedings paper2015, IEEE Symposium on VLSI Technology, 15/06/2015, p.T26-T27