Browsing by Author "Sangiorgi, Enrico"
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Publication Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
Journal article2017, IEEE Electron Device Letters, (38) 1, p.99-102Publication PBTI in GaN-HEMT's with p-type gate: role of the aluminum content on DVtH and underlying degradation mechanisms
Journal article2018, IEEE Transactions on Electron Devices, (65) 1, p.38-44Publication Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
Proceedings paper2019-04, IEEE International Reliability Physics Symposium (IRPS), 31/03/2019, p.4D4.1-4D4.10Publication Threshold Voltage Instability in GaN HEMTs with p-type Gate: Mg Doping Compensation
Journal article2019, IEEE Electron Device Letters, (4) 40, p.518-521Publication Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode apacing length dependence
Proceedings paper2016, IEEE International Reliability Physics Symposium, 17/04/2016, p.4A.5