Browsing by Author "Satta, Alessandra"
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Publication A comparison of spike, flash, SPER and laser annealing for 45nm CMOS
Proceedings paper2003, CMOS Front-End Materials and Process Technology, 21/04/2003, p.261-266Publication A study of growth mechanism of TiN and WCN barrier films deposited by atomic layer deposition on different substrates
Meeting abstract2002, B-ALD-5: The 5th Baltic Symposium on Atomic Layer Deposition, 24/10/2002, p.21Publication Active dopant characterization methodology for Germanium
Proceedings paper2005, Proceedings of the 8th Int. Workshop on the Fabrication , Characterization and Modeling of Ultra Shallow Junctions in Semicond., 5/06/2005, p.373-382Publication Advanced carrier depth profiling on Si and Ge with M4PP
Proceedings paper2007, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling, 6/05/2007Publication Advanced carrier depth profiling on Si and Ge with micro four-point probe
Journal article2008, Journal of Vacuum Science and Technology B, (26) 1, p.317-321Publication Analysis of junction leakage in advanced germanium p+/n junctions
Proceedings paper2007, ESSDERC Proceedings, 11/09/2007, p.454-457Publication Atomic layer deposited barriers for copper interconnects
Meeting abstract2004, AVS 51 International Symposium, 14/11/2004, p.TF-MoM1Publication Atomic layer deposition of barriers for interconnect
Publication Barriers for Cu/low k damascene structures
Journal article2001, Semiconductor Fabtech, 14, p.189-191Publication Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge Layers on Si substrates
Journal article2008, Thin Solid Films, (517) 1, p.172-177Publication Characterization of TiN films deposited by atomic layer deposition
Proceedings paper2002, Proceedings of the 3rd AVS International Conference on Microelectronics and Interfaces, 11/02/2002, p.56-58Publication Comparative study of Ni-silicide and Co-silicide for sub 0.25 μm technologies
Oral presentation1999, European Workshop Materials for Advanced Metallization; March 8-10, 1999; Oostende, Belgium.Publication Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies
Journal article2000, Microelectronic Engineering, (50) 1_4, p.103-116Publication Defect removal, dopant diffusion and activation issues in ion-implanted shallow junctions fabricated in crystalline germanium substrates
Proceedings paper2005, Gettering and Defect Engineering in Semiconductor Technology XI. Proceedings of the 11th International Autumn Meeting, 25/09/2005, p.691-696Publication Development of sub-10-nm atomic layer deposition barriers for Cu/low-k interconnects
Journal article2002, Microelectronic Engineering, (64) 1_4, p.233-245Publication Device characteristics of ultra-shallow junctions formed by fRTP annealing
Proceedings paper2004, Silicon Front-End Junction Formation - Physics and Technology, 12/04/2004, p.C1.3Publication Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium
Journal article2005, Applied Physics letters, (87) 17, p.172109-1-172109-3Publication Dopant profiling in Ge
Meeting abstract2003, International Conference on Secondary Ion Mass Spectrometry - SIMS XIV, 14/09/2003, p.163Publication Dopants for N and P junctions in germanium
Proceedings paper2005, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 16/05/2005, p.468-475