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Browsing by Author "Schwitters, Michael"

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    Composition control and ferroelectric properties of sidewall Sr0.8Bi2.2Ta2O9 in integrated 3-Dimensional ferroelectric capacitors

    Goux, Ludovic  
    ;
    Lisoni, Judit
    ;
    Schwitters, Michael
    ;
    Paraschiv, Vasile  
    ;
    Maes, D.
    ;
    Haspeslagh, Luc  
    Proceedings paper
    2005, Proceedings 1st International Conference on Memory Technology and Design, 21/05/2005, p.163-166
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    Composition control and ferrolectric properties of sidewalls in three-dimensional SrBi2Ta2O9-based ferroelectric capacitors

    Goux, Ludovic  
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    Lisoni, Judit
    ;
    Schwitters, Michael
    ;
    Paraschiv, Vasile  
    ;
    Maes, David
    Journal article
    2005-09, Journal of Applied Physics, (98) 5, p.054507-1-054507-7
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    Dependency of the properties of SrxBiyTa2O9 thin films on the Sr and Bi stoichiometry

    Viapiana, Matteo
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    Schwitters, Michael
    ;
    Wouters, Dirk
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    Maes, Herman
    ;
    Van der Biest, Omer
    Journal article
    2005, Materials Science and Engineering B, (118) 1_3, p.34-38
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    Excellent reliability properties of 0.81mm2 integrated SBT fecap's with 3-D structure

    Goux, Ludovic  
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    Russo, G.
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    Lisoni, Judit
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    Schwitters, Michael
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    Paraschiv, Vasile  
    ;
    Maes, David
    Oral presentation
    2005, 7th International Symposium on Integrated Ferroelectrics
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    Influence of dry-etch patterning of top electrode and SrBi2Ta2O9 on the properties of ferroelectric capacitors

    Goux, Ludovic  
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    Paraschiv, Vasile  
    ;
    Lisoni, Judit
    ;
    Schwitters, Michael
    ;
    Maes, David
    Journal article
    2005, Journal of the Electrochemical Society, (152) 12, p.C865-C869
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    Integration of ferroelectric SrBi2Ta2O9-based capacitors beyond 0.18 CMOS technology

    Johnson, J.
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    Goux, Ludovic  
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    Schwitters, Michael
    ;
    Paraschiv, Vasile  
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    Maes, David
    ;
    Haspeslagh, Luc  
    Oral presentation
    2003, Conference of Surface Science and their Applications - CLACSA-11
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    Integration of ferroelectric SrBi2Ta2O9-based capacitors in 0.35 μm CMOS technology

    Lisoni, Judit
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    Johnson, Jo
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    Goux, Ludovic  
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    Schwitters, Michael
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    Paraschiv, Vasile  
    ;
    Maes, David
    Journal article
    2004, Physica Status Solidi C, (1) S1, p.S78-S82
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    Integration of SrBi2Ta2O9 (SBT) based FRAM capacitors: plasma etch issues and solutions

    Paraschiv, Vasile  
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    Boullart, Werner  
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    Vanhaelemeersch, Serge  
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    Lisoni, Judit
    Oral presentation
    2004, E-MRS Spring Meeting Symposium D: Functional Oxides for Advanced Semiconductor Technologies
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    MOCVD-SBT thin films for advanced FeRAM: deposition and film formation processes

    Wouters, Dirk
    ;
    Everaert, Jean-Luc
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    Schwitters, Michael
    ;
    Johnson, Jo
    ;
    Vander Meeren, Hans
    Meeting abstract
    2003, 15th International Symposium on Integrated Ferroelectrics - ISIF, 9/03/2003, p.388-389
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    Sidewalls contribution in integrated three-dimensional Sr0.8Bi2.2Ta2O9-based ferroelectric capacitors

    Menou, M.
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    Turquat, Ch.
    ;
    Madigou, V.
    ;
    Muller, Ch.
    ;
    Goux, Ludovic  
    ;
    Lisoni, Judit
    Journal article
    2005, Applied Physics Letters, (87) 7, p.073502-1-073502-3

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