Browsing by Author "Srivastava, Puneet"
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Publication 10 μm pixel-to-pixel pitch hybrid backside illuminated AlGaN-on-Si imagers for solar blind EUV radiation detection
Proceedings paper2010-12, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.348-351Publication 2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer
Proceedings paper2012, International Conference on Compound Semiconductor MANufacturing TECHnology - MANTECH, 23/04/2012Publication A 96% efficient high-frequency DC–DC converter using E-mode GaN DHFETs on Si
;Das, Jo ;Everts, Jordi ;Van den Keybus, Jeroen ;Van Hove, MarleenVisalli, DomenicaJournal article2011, IEEE Electron Device Letters, (32) 10, p.1370-1372Publication A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
Proceedings paper2010-12, IEEE International Electron Device Meeting - IEDM, 6/12/2010, p.472-472Publication AlGaN-on-Si-based 10-um pixel-to-pixel pitch hybrid imagers for the EUV range
Journal article2011, IEEE Electron Device Letters, (32) 11, p.1561-1563Publication AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications
;Srivastava, Puneet ;Das, Jo ;Visalli, Domenica ;Van Hove, MarleenDerluyn, JoffMeeting abstract2010, Young Researchers Symposium 2010 organized by IEEE Joint IAS- PELS-PES Chapter Benelux, 29/03/2010Publication AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility
Journal article2012, Applied Physics Express, (5) 1, p.011002-1Publication Assessment of GaN-on-Si HEMTs for 50V-2GHz RF applications: impact of the RF loss at the buffer/Si interface on the device performance
Meeting abstract2012, Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 28/05/2012Publication Backside illuminated AlGaN-on-Si UV detectors integrated by high density flip-chip bonding
Oral presentation2010, International Workshop on Nitride Semiconductors - IWNPublication Backside illuminated AlGaN-on-Si UV detectors integrated by high density flip-chip bonding
Journal article2011, Physica Status Solidi C, (8) 7_8, p.2476-2478Publication EUV detectors based on AlGaN-on-Si Schottky photodiodes
Meeting abstract2011, Optical Sensors; and Photonic Crystal Fibers V, 18/04/2011, p.807302Publication Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN HFETs by Si substrate removal
;Visalli, Domenica ;Van Hove, Marleen ;Srivastava, Puneet ;Derluyn, Joff ;Das, JoLeys, MaartenJournal article2010, Applied Physics Letters, (97) 11, p.113501Publication Forward gate bias on-state stress on AlGaN/GaN MIS-HEMTs for power switching applications
Meeting abstract2012, Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 28/05/2012Publication GaN-based HEMTs tested under high temperature storage test
Journal article2011, Microelectronics Reliability, (51) 9_11, p.1717-1720Publication GaN-on-Si for high-voltage applications
Meeting abstract2011, 220th Electrochemical Society Fall Meeting Symposium E: GaN and SiC Power Technologies, 9/10/2011, p.2173Publication GaN-on-Si for high-voltage applications
Proceedings paper2011, Gallium Nitride and Silicon Carbide Power Technologies, 9/10/2011, p.101-112Publication GaN-on-Si for power conversion
Proceedings paper2010, The International Conference on Compound Semiconductor Manufacturing Technology - CSMANTECH, 17/05/2010, p.225-228Publication GaN-on-Si HEMTs for 50 V RF applications
Meeting abstract2012, European Microwave Integrated Circuits Conference - EuMIC, 28/10/2012Publication HBM ESD robustness of GaN-on-Si Schottky diodes
Journal article2012, IEEE Transactions on Device and Materials Reliability, (12) 4, p.589-598Publication HBM ESD robustness of GaN-on-Si Schottky diodes
Proceedings paper2011, 21st RCJ Reliability Symposium, 1/11/2011