Browsing by Author "Stanojevic, Zlatan"
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Publication 3D TCAD model for poly-Si channel current and variability in vertical NAND flash memory
Proceedings paper2019, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 4/09/2019Publication A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence
Journal article2024, MICROMACHINES, (15) 7, p.Art. 829Publication Distribution function based simulations of hot-carrier degradation in nanowire FETs
Proceedings paper2018, International Integrated Reliability Workshop (IIRW), 7/10/2018, p.1-4Publication Full (Vg,Vd) bias space modeling of hot-carrier degradation in nanowire FETs
Proceedings paper2019, 2019 IEEE International Reliability Physics Symposium - IRPS, 31/03/2019, p.1-7Publication Modeling the Operation of Charge Trap Flash Memory-Part II: Understanding the ISPP Curve With a Semianalytical Model
Journal article2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 1, p.554-559Publication On the Modeling of Polycrystalline Ferroelectric Thin Films: Landau-Based Models Versus Monte Carlo-Based Models Versus Experiment
Publication Statistical Poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels
Proceedings paper2015, International Electron Devices Meeting - IEDM, 7/12/2015, p.121-124