Browsing by Author "Stuer, Cindy"
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Publication Characterisation of the local mechanical stress in sub-0.25 μm microelectronic technologies
Stuer, CindyPHD thesis2001Publication Characterisation of the local stress in CoSi2 silicided shallow trench isolation structures
Proceedings paper2001, Microscopy of Semiconducting Materials - MSMXII, 25/03/2001, p.481-484Publication Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy
Proceedings paper1999, International Electron Devices Meeting. Technical digest; 5-8 Dec. 1999; Washington, D.C., USA., p.357-360Publication Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures
Journal article2001, Journal of the Electrochemical Society, (148) 11, p.G597-G601Publication Morphology and defects in shallow trench isolation structures
Proceedings paper1999, Microscopy of Semiconducting Materials, 22/03/1999, p.443-446Publication Near field optical spectroscopy of resonant tunnelling light-emitters
Journal article1998, Materials Science and Engineering B, (51) 1_3, p.9-11Publication Near-field optical spectroscopy of resonant tunneling light-emitters
Oral presentation1997, LPSD97; 18-22 May 1997; Lisboa, Portugal.Publication Quantitative EFTEM study of germanium quantum dots
Proceedings paper2001, Proceedings 5th Multinational Conference on Electron Microscopy; 20-25 September 2001; Lecce, Italy., p.345-346Publication SSRM & SCM observation of enhanced lateral AS- and BF2-diffusion induced by nitride spacers
; ; ;Stuer, Cindy; ;Rooyackers, RitaClarysse, TrudoProceedings paper2001, Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions II, 24/04/2000, p.B2.2.1-B2.2.12Publication SSRM & SCM observation of modified lateral diffusion of As, BF2 and Sb induced by nitride spacers
; ; ;Stuer, Cindy; ;Rooyackers, RitaClarysse, TrudoProceedings paper2001, Si Front-End Processing-Physics and Technology of Dopant-Defect Interactions III, 17/04/2001, p.J2.2.1-J2.2.6Publication Stress analysis with convergent beam electron diffraction around NMOS transistors
Proceedings paper2001, Proceedings 5th Multinational Conference on Electron Microscopy; 20-25 September 2001; Lecce, Italy., p.359-360Publication The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures
Oral presentation2000, International Conference on Electronic Materials & European Materials Research Society Spring Meeting. Symposium M: Advanced ChaPublication The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures
Journal article2001, Materials Science in Semiconductor Processing, (4) 1_3, p.117-119