Browsing by Author "Thangaraju, Sarasvathi"
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Publication Comprehensive analysis of the impact of single and arrays of through silicon vias induced stress on high-k / metal gate CMOS performances
Proceedings paper2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.26-29Publication Impact of thinning and through silicon via proximity on high-k / metal gate first CMOS performance
Proceedings paper2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.109-110Publication Implementation of an industry compliant, 5×50μm, via-middle TSV technology on 300mm wafers
Proceedings paper2011-06, IEEE 61st Electronic Components and Technology Conference - ECTC, 31/05/2011, p.1384-1388Publication Integration of TSVs, wafer thinning and backside passivation on full 300mm CMOS wafers for 3D applications
Proceedings paper2011, IEEE 61st Electronic Components and Technology Conference - ECTC, 31/05/2011, p.1122-1125Publication On the thermal stability of physically-vapor-deposited diffusion barriers in 3D through-silicon vias during IC processing
Journal article2013, Microelectronic Engineering, 106, p.155-159Publication Plasma enhanced atomic layer deposition of silicon oxide for through silicon via
;Kwon, Hak-Yong ;Kim, Jeon-Ho ;Kim, Young-Hoon ;Kim, Young-Jae ;Kim, Dae-YounChoi, Seung-WooProceedings paper2010, 10th International Conference on Atomic Layer Deposition - ALD, 20/06/2010Publication Relationships between deposition parameters, step coverage, throughput, and electrical properties of PEALD SiO2 insulation liners for HVM TSV application
;Jung, In Soo ;Woo, Jeong-Jun ;Kwon, Hak Yong ;Kim, Young-Jae ;Kang, Dong-SukPark, Ju-HyukMeeting abstract2011, 11th International Conference on Atomic Layer Deposition - ALD, 26/06/2011Publication Technology assessment of through-silicon via by using C-V and C-t Measurements
Journal article2011, IEEE Electron Device Letters, (32) 7, p.946-948Publication Thermal stability of copper through-silicon via barriers during IC processing
Proceedings paper2011, IEEE International Interconnect Technology Conference and Materials for Advanced Metallization - IITC/MAM, 8/05/2012, p.P2.51