Browsing by Author "Tinck, Stefan"

Comparison of CF4, CHF3, and CH2F2 plasmas used for wafer processing

Computer simulations of SiCl4/O2 ICP discharges used for coatings deposition or mask damage recovery

Etching of low-k materials for microelectronics applications by means of a N2/H2 plasma: Modeling and experimental investigation

Influence of the top chamber window temperature on the STI etch process

Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by means of plasma–surface simulations and experiments

Layer on photoresist lines with an Ar/SiCl4/O2 inductively coupled plasma: a modeling investigation

Mechanisms for plasma cryogenic etching of porous materials

Modeling and experimental investigation of the plasma uniformity in CF4/O2 capacitively coupled plasmas, operating in single frequency and dual frequency regime

Modeling Ar/Cl2/O2 and Ar/SiH4/O2 Inductively Coupled Plasmas used for anisotropic etching of silicon and deposition of SiOx

Modeling fluorocarbon plasmas used for etching of Si

Modeling Sicl4/O2 plasmas used for depositing SiO2 coatings or mask recovery

Modeling the influence of gas composition in an Ar/Cl2/O2 inductively coupled plasma used for STI etching

Numerical investigation of HBr/He transformer coupled plasmas used for silicon etching

Simulating plasma + surface processes for the etching of silicon wtih an Ar/Cl2/O2 inductively coupled plasma

Simulation of Ar/Cl2/O2 inductively coupled plasmas used for anisotropic etching of silicon

Simultaneous etching and deposition processes during the etching of silicon with a Cl(2)/O(2)/Ar inductively coupled plasma