Browsing by Author "Tois, E."
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Publication ALD La-based oxides for Vt-tuning in high-k/metal gate stacks
Proceedings paper2007, Atomic Layer Deposition Applications 3 Atomic Layer Deposition Applications 3, 7/10/2007, p.201-211Publication ALD La2O3 cap layers on high-k gates to modify the metal gate work function
; ; ;Tois, E.; ; Proceedings paper2007, AVS Topical Conference on Atomic Layer Deposition - ALD, 24/07/2007Publication Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O
Journal article2007, Electrochemical and Solid-State Letters, (10) 5, p.H149-H152Publication Extreme scaled gate dielectrics by using ALD Hf-based composite materials
Meeting abstract2009, 216th ECS Meeting, 4/10/2009, p.2037Publication Extreme scaled gate dielectrics by using ALD HfO2/SrTiO3 composite structures
Proceedings paper2009, Atomic Layer Deposition Applications 5, 4/10/2009, p.263-274Publication Properties of HfTaxOy high-k layers deposited by ALCVD
;Zhao, Chao ;Rittersma, Z.M. ;van Berkum, J.G.M. ;Snijders, J.H.M. ;Hendriks, A.Breimer, P.Proceedings paper2005, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 15/05/2005, p.133-140