Browsing by Author "Van Landuyt, J."
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Publication A novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon
; Claeys, CorJournal article2003, Physica B, 340-342, p.1013-1017Publication Characterisation of the local stress in CoSi2 silicided shallow trench isolation structures
Proceedings paper2001, Microscopy of Semiconducting Materials - MSMXII, 25/03/2001, p.481-484Publication Characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy
Journal article2004, Journal of the Electrochemical Society, (151) 9, p.G598-G605Publication Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy
Journal article2001, Materials Science in Semiconductor Processing, (4) 1_3, p.109-111Publication Chemical and structural analysis of etching rsidue layers in semiconductor devices with energy filtering transmission electron spectroscopy
Oral presentation2000, International Conference on Electronic Materials & European Materials Research Society Spring Meeting. Symposium M: Advanced ChaPublication Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy
; Claeys, CorProceedings paper2002, High Purity Silicon VII, 20/10/2002, p.183-194Publication Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM
Journal article2001, Physica B, 308, p.294-297Publication Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
; ; White, M. E.Journal article2000, MRS Internet Journal of Nitride Semiconductor Research, 5, Suppl. 1, p.W11.38Publication Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
; ; White, M. E.Proceedings paper2000, GaN and Related Alloys - 1999, 29/11/1999, p.W11.38.1Publication Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy
Proceedings paper1999, International Electron Devices Meeting. Technical digest; 5-8 Dec. 1999; Washington, D.C., USA., p.357-360Publication Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer
Journal article2000, Applied Physics Letters, (77) 4, p.507-509Publication EFTEM analysis of the interaction of CO with a fluorinated organic dielectric
Proceedings paper2000, Proceedings EUREM 12, 9/07/2000, p.1325-1326Publication EFTEM as a porosity metrology tool for low-k dielectrics
Proceedings paper2002, Conference Book Joint Microscopy Meeting - JMM, 25/06/2002Publication EFTEM study of plasma etched low-k Si-O-C dielectrics
Proceedings paper2001, Microscopy of Semiconducting Materials - MSMXII, 25/03/2001, p.415-418Publication Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in a HREM
Publication High resolution electron microscopy for semiconductor materials
Publication HREM investigation of a ferromagnetic Fe/GaN/Fe tunnel junction
Proceedings paper2001, Microscopy of Semiconducting Materials - MSMXII, 25/03/2001, p.53-65Publication In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines
; ; Van Landuyt, J.Journal article2001, Journal of Applied Physics, (90) 1, p.167-174Publication In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates
Journal article2001, Journal of Materials Research, (16) 3, p.701-708Publication In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces