Browsing by Author "Van Landuyt, J."
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Publication A novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon
; Claeys, CorJournal article2003, Physica B, 340-342, p.1013-1017Publication Characterisation of the local stress in CoSi2 silicided shallow trench isolation structures
Proceedings paper2001, Microscopy of Semiconducting Materials - MSMXII, 25/03/2001, p.481-484Publication Characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy
Journal article2004, Journal of the Electrochemical Society, (151) 9, p.G598-G605Publication Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy
Journal article2001, Materials Science in Semiconductor Processing, (4) 1_3, p.109-111Publication Chemical and structural analysis of etching rsidue layers in semiconductor devices with energy filtering transmission electron spectroscopy
Oral presentation2000, International Conference on Electronic Materials & European Materials Research Society Spring Meeting. Symposium M: Advanced ChaPublication Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy
; Claeys, CorProceedings paper2002, High Purity Silicon VII, 20/10/2002, p.183-194Publication Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM
Journal article2001, Physica B, 308, p.294-297Publication Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
; ; White, M. E.Proceedings paper2000, GaN and Related Alloys - 1999, 29/11/1999, p.W11.38.1Publication Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
; ; White, M. E.Journal article2000, MRS Internet Journal of Nitride Semiconductor Research, 5, Suppl. 1, p.W11.38Publication Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy
Proceedings paper1999, International Electron Devices Meeting. Technical digest; 5-8 Dec. 1999; Washington, D.C., USA., p.357-360Publication Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer
Journal article2000, Applied Physics Letters, (77) 4, p.507-509Publication EFTEM analysis of the interaction of CO with a fluorinated organic dielectric
Proceedings paper2000, Proceedings EUREM 12, 9/07/2000, p.1325-1326Publication EFTEM as a porosity metrology tool for low-k dielectrics
Proceedings paper2002, Conference Book Joint Microscopy Meeting - JMM, 25/06/2002Publication EFTEM study of plasma etched low-k Si-O-C dielectrics
Proceedings paper2001, Microscopy of Semiconducting Materials - MSMXII, 25/03/2001, p.415-418Publication Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in a HREM
Publication High resolution electron microscopy for semiconductor materials
Publication HREM investigation of a ferromagnetic Fe/GaN/Fe tunnel junction
Proceedings paper2001, Microscopy of Semiconducting Materials - MSMXII, 25/03/2001, p.53-65Publication In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines
; ; Van Landuyt, J.Journal article2001, Journal of Applied Physics, (90) 1, p.167-174Publication In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates
Journal article2001, Journal of Materials Research, (16) 3, p.701-708Publication In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces