Browsing by Author "Vandamme, Ewout"
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Publication A high performance 0.18µm elevated source/drain technology with improved manufacturability
Proceedings paper1999, ESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference, 13/09/1999, p.636-639Publication A new dummy-free shallow trench isolation concept for mixed-signal applications
Publication A new dummy-free shallow trench isolation concept for mixed-signal applications
Publication Accuracy assessment of the BSIM3v3 MOSFET compact model for large signal RF applications
Proceedings paper2000, Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers, 26/04/2000, p.152-155Publication Applicability of non-linear modelling methods based on vectorial large-signal measurements to MOSFETs
Proceedings paper2000, IEEE MTT-S International Microwave Symposium, 11/06/2000, p.457-460Publication Critical discussion on unified 1/f noise models for MOSFETs
Publication Current crowding and its effect on 1/f noise and third harmonic distortion - a case study for quality
Publication Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model
Journal article2002, Solid-State Electronics, (46) 3, p.353-360Publication Diagnostics of the quality of MOSFETs
Publication Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: process window versus complexity
Journal article2000, IEEE Trans. Electron Devices, (47) 7, p.1484-1491Publication Evaluation of non-linear modelling techniques for MOSFETs based on vectorial large-signal measurements
Proceedings paper2000, IEEE International Symposium on Circuits and Systems - ISCAS, 28/05/2000, p.429-432Publication Impact of MOSFET oxide breakdown on digital circuit operation and reliability
Proceedings paper2000, IEDM Technical Digest, 10/12/2000, p.553-556Publication Impact of non-quasi-static effects on the high-frequency small-signal behaviour of MOSFETs
Publication Impact of probe-to-pad contact degradation on the high-frequency charateristics of RF MOSFETs and guidelines to avoid it
Journal article2001, International Journal of RF and Microwave Computer-Aided-Engineering, (11) 3, p.114-120Publication Impact of silicidation on the excess noise behaviour of MOS transistors
Journal article1995, Solid-State Electronics, (38) 11, p.1893-1897Publication Impact of silicon substrate, iron contamination and perimeter on saturation current and noise in n+p diodes
Publication Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures
Journal article2001, IEEE Trans. Electron Devices, (48) 4, p.737-742Publication L-shape spacer architecture for low cost, high performance CMOS
Publication Large-signal model extraction and parameter estimation based on vectorial large-signal measurements
Proceedings paper1999, Proceedings of the XXVIth General Assembly International Union of Radio Science, 13/08/1999, p.248Publication Low frequency noise analysis as a diagnostic tool to assess the quality of 0.25 μm Ti-silicided poly-lines
Proceedings paper1998, Proceedings of the 9th European Symposium on Reliability of Electron Devices and Failure Physics - ESREF, 5/10/1998, p.925-929