Browsing by Author "Verhaege, Koen"
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Publication A compact model for the grounded-gate nMOS behaviour under CDM ESD stress
Proceedings paper1996, Proceedings of 18th Annual Electrical Overstress/Electrostatic Discharge Symposium, 10/09/1996, p.302-315Publication A compact model for the grounded-gate nMOS transistor behaviour under CDM ESD stress
Journal article1998, Journal of Electrostatics, (42) 4, p.351-381Publication Analysis of HBM ESD testers and specifications using a fourth order lumped element model
Journal article1994, Quality and Reliability Engineering International, 10, p.325-334Publication ESD protection elements during HBM stress tests - further numerical and experimental results
;Russ, Christian ;Gieser, H.Verhaege, KoenProceedings paper1994, Proceedings 16th Annual EOS/ESD Symposium, 26/09/1994, p.96-105Publication ESD protection elements during HBM stress tests - further numerical and experimental results
;Russ, Christian ;Gieser, H.Verhaege, KoenJournal article1995, Quality and Reliability Engineering International, (11) 4, p.285-294Publication Fast transient ESD simulation of the NMOS protection transistor
;Luchies, J. R. M. ;Verhaege, Koen ;Kuper, F. G.de Graaff, H. C.Proceedings paper1995, 25th European Solid State Device Research Conference - ESSDERC, 25/09/1995, p.307-310Publication Grounded-gate nMOS transistor behaviour under CDM ESD stress conditions
Journal article1997, IEEE Trans. Electron Devices, (44) 11, p.1972-1980Publication Influence of tester, test method and device type on CDM ESD testing
Proceedings paper1994, Proceedings 16th Annual EOS/ESD Symposium, 26/09/1994, p.49-62Publication Justifications for reducing HBM and MM ESD qualification test time
;Verhaege, Koen ;Robinson-Hahn, D. ;Russ, Christian ;Farris, M. ;Scanlon, J. ;Lin, D.Veltri, J.Journal article1996, Microelectronics and Reliability, 36, p.1715-1718Publication NMOS transistor behaviour under CDM stress conditions and relation to other ESD models
Proceedings paper1995, Proceedings of the 6th ESREF Conference, 3/10/1995, p.117-125Publication Recommendations to further improvements of HBM ESD component level test specifications
;Verhaege, Koen ;Russ, Christian ;Robinson-Hahn, D. ;Farris, M. ;Scanlon, J. ;Lin, DonVeltri, J.Proceedings paper1996, Proceedings of 18th Annual Electrical Overstress/Electrostatic Discharge Symposium, 10/09/1996, p.40-53Publication Simulation study for the CDM ESD behaviour of the grounded-gate nMOS
Journal article1996, Microelectronics and Reliability, 36, p.1739-1742