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Browsing by Author "Verhaege, Koen"

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    A compact model for the grounded-gate nMOS behaviour under CDM ESD stress

    Russ, Christian
    ;
    Verhaege, Koen
    ;
    Bock, Karlheinz
    ;
    Roussel, Philippe  
    ;
    Groeseneken, Guido  
    Proceedings paper
    1996, Proceedings of 18th Annual Electrical Overstress/Electrostatic Discharge Symposium, 10/09/1996, p.302-315
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    A compact model for the grounded-gate nMOS transistor behaviour under CDM ESD stress

    Russ, Christian
    ;
    Verhaege, Koen
    ;
    Bock, Karlheinz
    ;
    Roussel, Philippe  
    ;
    Groeseneken, Guido  
    Journal article
    1998, Journal of Electrostatics, (42) 4, p.351-381
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    Analysis of HBM ESD testers and specifications using a fourth order lumped element model

    Verhaege, Koen
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    Roussel, Philippe  
    ;
    Groeseneken, Guido  
    ;
    Maes, Herman
    ;
    Gieser, H.
    ;
    Russ, Christian
    Journal article
    1994, Quality and Reliability Engineering International, 10, p.325-334
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    ESD protection elements during HBM stress tests - further numerical and experimental results

    Russ, Christian
    ;
    Gieser, H.
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    Verhaege, Koen
    Proceedings paper
    1994, Proceedings 16th Annual EOS/ESD Symposium, 26/09/1994, p.96-105
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    ESD protection elements during HBM stress tests - further numerical and experimental results

    Russ, Christian
    ;
    Gieser, H.
    ;
    Verhaege, Koen
    Journal article
    1995, Quality and Reliability Engineering International, (11) 4, p.285-294
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    Fast transient ESD simulation of the NMOS protection transistor

    Luchies, J. R. M.
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    Verhaege, Koen
    ;
    Kuper, F. G.
    ;
    de Graaff, H. C.
    Proceedings paper
    1995, 25th European Solid State Device Research Conference - ESSDERC, 25/09/1995, p.307-310
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    Grounded-gate nMOS transistor behaviour under CDM ESD stress conditions

    Verhaege, Koen
    ;
    Russ, Christian
    ;
    Luchies, J. M.
    ;
    Groeseneken, Guido  
    ;
    Kuper, F. G.
    Journal article
    1997, IEEE Trans. Electron Devices, (44) 11, p.1972-1980
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    Influence of tester, test method and device type on CDM ESD testing

    Verhaege, Koen
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    Groeseneken, Guido  
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    Maes, Herman
    ;
    Egger, P.
    ;
    Gieser, H.
    Proceedings paper
    1994, Proceedings 16th Annual EOS/ESD Symposium, 26/09/1994, p.49-62
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    Justifications for reducing HBM and MM ESD qualification test time

    Verhaege, Koen
    ;
    Robinson-Hahn, D.
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    Russ, Christian
    ;
    Farris, M.
    ;
    Scanlon, J.
    ;
    Lin, D.
    ;
    Veltri, J.
    Journal article
    1996, Microelectronics and Reliability, 36, p.1715-1718
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    NMOS transistor behaviour under CDM stress conditions and relation to other ESD models

    Verhaege, Koen
    ;
    Luchies, J. M.
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    Russ, Christian
    ;
    Groeseneken, Guido  
    ;
    Kuper, F.
    Proceedings paper
    1995, Proceedings of the 6th ESREF Conference, 3/10/1995, p.117-125
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    Recommendations to further improvements of HBM ESD component level test specifications

    Verhaege, Koen
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    Russ, Christian
    ;
    Robinson-Hahn, D.
    ;
    Farris, M.
    ;
    Scanlon, J.
    ;
    Lin, Don
    ;
    Veltri, J.
    Proceedings paper
    1996, Proceedings of 18th Annual Electrical Overstress/Electrostatic Discharge Symposium, 10/09/1996, p.40-53
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    Simulation study for the CDM ESD behaviour of the grounded-gate nMOS

    Russ, Christian
    ;
    Verhaege, Koen
    ;
    Bock, Karlheinz
    ;
    Groeseneken, Guido  
    ;
    Maes, Herman
    Journal article
    1996, Microelectronics and Reliability, 36, p.1739-1742

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