Browsing by Author "Vexler, Mikhail"
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Publication Analysis of the features of hot-carrier degradation in FinFETs
Journal article2018-10, Semiconductors, (52) 10, p.1298-1302Publication Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
Journal article2023, MICROMACHINES, (14) 11, p.Art. 2018Publication Impact of the device geometric parameters on hot-carrier degradation in FinFETs
Journal article2018, Semiconductors, (52) 13, p.1738-1742Publication On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors
Proceedings paper2022, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022Publication Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures
Journal article2018-02, Semiconductors, (52) 2, p.242-247Publication Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors
Proceedings paper2022, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022