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Browsing by Author "Vexler, Mikhail"

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    Analysis of the features of hot-carrier degradation in FinFETs

    Makarov, Alexander
    ;
    Tyaginov, Stanislav  
    ;
    Kaczer, Ben  
    ;
    Jech, Markus
    ;
    Vaisman Chasin, Adrian  
    Journal article
    2018-10, Semiconductors, (52) 10, p.1298-1302
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    Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

    Tyaginov, Stanislav  
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    Bury, Erik  
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    Grill, Alexander  
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    Yu, Zhuoqing
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    Makarov, Alexander  
    Journal article
    2023, MICROMACHINES, (14) 11, p.Art. 2018
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    Impact of the device geometric parameters on hot-carrier degradation in FinFETs

    Tyaginov, Stanislav  
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    Makarov, Alexander
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    Kaczer, Ben  
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    Jech, Markus
    ;
    Vaisman Chasin, Adrian  
    Journal article
    2018, Semiconductors, (52) 13, p.1738-1742
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    On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors

    Tyaginov, Stanislav  
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    Afzalian, Aryan  
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    Makarov, Alexander  
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    Grill, Alexander
    Proceedings paper
    2022, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022
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    Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures

    Tyaginov, Stanislav  
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    Makarov, Alexander
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    Jech, Markus
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    Vexler, Mikhail
    ;
    Franco, Jacopo  
    Journal article
    2018-02, Semiconductors, (52) 2, p.242-247
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    Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors

    Tyaginov, Stanislav  
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    Makarov, Alexander
    ;
    El-Sayed, Al-Moatasem Bellah
    ;
    Vaisman Chasin, Adrian  
    Proceedings paper
    2022, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022

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