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Browsing by Author "Visalli, Domenica"

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    2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer

    Srivastava, Puneet
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    Cheng, Kai
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    Das, Jo
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    Van Hove, Marleen
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    Leys, Maarten
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    Marcon, Denis  
    Proceedings paper
    2012, International Conference on Compound Semiconductor MANufacturing TECHnology - MANTECH, 23/04/2012
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    A 96% efficient high-frequency DC–DC converter using E-mode GaN DHFETs on Si

    Das, Jo
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    Everts, Jordi
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    Van den Keybus, Jeroen
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    Van Hove, Marleen
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    Visalli, Domenica
    Journal article
    2011, IEEE Electron Device Letters, (32) 10, p.1370-1372
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    A deep-level analysis of Ni-Au/AlN(111) p-Si metal-insulator-semiconductor capacitors

    Simoen, Eddy  
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    Visalli, Domenica
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    Van Hove, Marleen
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    Leys, Maarten
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    Borghs, Gustaaf  
    Journal article
    2011, Journal of Physics D: Applied Physics, (44) 47, p.475104
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    AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications

    Srivastava, Puneet
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    Das, Jo
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    Visalli, Domenica
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    Van Hove, Marleen
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    Derluyn, Joff
    Meeting abstract
    2010, Young Researchers Symposium 2010 organized by IEEE Joint IAS- PELS-PES Chapter Benelux, 29/03/2010
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    AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance

    Visalli, Domenica
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    Derluyn, Joff
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    Degroote, Stefan
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    Leys, Maarten
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    Cheng, Kai
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    Germain, Marianne
    Proceedings paper
    2008, 40th International Conference on Solid State Devices and Materials - SSDM, 23/09/2008
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    AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance

    Visalli, Domenica
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    Van Hove, Marleen
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    Derluyn, Joff
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    Degroote, Stefan
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    Leys, Maarten
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    Cheng, Kai
    Journal article
    2009, Japanese Journal of Applied Physics, (48) 4, p.04C101
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    Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers

    Priesol, Juraj
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    Satka, Alexander
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    Visalli, Domenica
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    Zhao, Ming  
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    Stoffels, Steve  
    Oral presentation
    2017, 5th international conference on Advances in Electronic and Photonic Technologies
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    Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers

    Priesol, Juraj
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    Satka, Alexander
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    Visalli, Domenica
    ;
    Derluyn, Joff
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    Zhao, Ming  
    ;
    Stoffels, Steve  
    Proceedings paper
    2017, 5th International Conference on Advances in Electronic and Photonic Technologies, 19/06/2017, p.263-266
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    Electrically active defects at the AlN/Si(111) interface studied by DLTS and ESR

    Simoen, Eddy  
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    Visalli, Domenica
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    Van Hove, Marleen
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    Leys, Maarten
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    Favia, Paola  
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    Bender, Hugo  
    Journal article
    2012, Physica Status Solidi A, (209) 10, p.1851-1856
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    Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C

    Marcon, Denis  
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    Van Hove, Marleen
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    Visalli, Domenica
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    Derluyn, Joff
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    Das, Jo
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    Medjdoub, Farid
    Proceedings paper
    2009, International Conference on Solid-State Devices and Materials Conference - SSDM, 7/10/2009, p.816-817
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    Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C

    Marcon, Denis  
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    Van Hove, Marleen
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    Visalli, Domenica
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    Derluyn, Joff
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    Das, Jo
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    Medjdoub, Farid
    Journal article
    2010, Japanese Journal of Applied Physics, (49) 4, p.04DF07
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    Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN HFETs by Si substrate removal

    Visalli, Domenica
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    Van Hove, Marleen
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    Srivastava, Puneet
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    Derluyn, Joff
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    Das, Jo
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    Leys, Maarten
    Journal article
    2010, Applied Physics Letters, (97) 11, p.113501
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    GaN-on-Si for high-voltage applications

    Visalli, Domenica
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    Van Hove, Marleen
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    Srivastava, Puneet
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    Marcon, Denis  
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    Geens, Karen  
    Meeting abstract
    2011, 220th Electrochemical Society Fall Meeting Symposium E: GaN and SiC Power Technologies, 9/10/2011, p.2173
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    GaN-on-Si for high-voltage applications

    Visalli, Domenica
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    Van Hove, Marleen
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    Srivastava, Puneet
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    Marcon, Denis  
    ;
    Geens, Karen  
    Proceedings paper
    2011, Gallium Nitride and Silicon Carbide Power Technologies, 9/10/2011, p.101-112
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    GaN-on-Si for power conversion

    Germain, Marianne
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    Derluyn, Joff
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    Van Hove, Marleen
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    Medjdoub, Farid
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    Das, Jo
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    Marcon, Denis  
    Proceedings paper
    2010, The International Conference on Compound Semiconductor Manufacturing Technology - CSMANTECH, 17/05/2010, p.225-228
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    GaN-on-Si power field effect transistors

    Germain, Marianne
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    Derluyn, Joff
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    Van Hove, Marleen
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    Medjdoub, Farid
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    Das, Jo
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    Cheng, Kai
    Proceedings paper
    2010, International Symposium on VLSI Technology Systems and Applications - VLSI-TSA, 26/04/2010, p.171-172
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    High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

    Visalli, Domenica
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    Van Hove, Marleen
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    Derluyn, Joff
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    Cheng, Kai
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    Degroote, Stefan
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    Leys, Maarten
    Journal article
    2009, Physica Status Solidi C, (6) S2, p.S988-S991
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    High temperature on- and off-state stress of GaN-on- Si HEMTs with in-situ Si3N4 cap layer

    Marcon, Denis  
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    Medjdoub, Farid
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    Visalli, Domenica
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    Van Hove, Marleen
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    Derluyn, Joff
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    Das, Jo
    Proceedings paper
    2010, IEEE International Reliability Physics Symposium - IRPS, 2/05/2010, p.146-151
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    Investigation of light-induced deep-level defect activation at the AlN/Si interface

    Visalli, Domenica
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    Van Hove, Marleen
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    Leys, Maarten
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    Derluyn, Joff
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    Simoen, Eddy  
    Journal article
    2011, Applied Physics Express, (4) 9, p.94101
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    Limitations of field plate effect due to the silicon substrate in AlGaN/GaN/AlGaN DHFETs

    Visalli, Domenica
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    Van Hove, Marleen
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    Derluyn, Joff
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    Srivastava, Puneet
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    Marcon, Denis  
    ;
    Das, Jo
    Journal article
    2010, IEEE Transactions on Electron Devices, (57) 12, p.3333-3339
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