Browsing by Author "Visalli, Domenica"
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Publication 2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer
Proceedings paper2012, International Conference on Compound Semiconductor MANufacturing TECHnology - MANTECH, 23/04/2012Publication A 96% efficient high-frequency DC–DC converter using E-mode GaN DHFETs on Si
;Das, Jo ;Everts, Jordi ;Van den Keybus, Jeroen ;Van Hove, MarleenVisalli, DomenicaJournal article2011, IEEE Electron Device Letters, (32) 10, p.1370-1372Publication A deep-level analysis of Ni-Au/AlN(111) p-Si metal-insulator-semiconductor capacitors
Journal article2011, Journal of Physics D: Applied Physics, (44) 47, p.475104Publication AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications
;Srivastava, Puneet ;Das, Jo ;Visalli, Domenica ;Van Hove, MarleenDerluyn, JoffMeeting abstract2010, Young Researchers Symposium 2010 organized by IEEE Joint IAS- PELS-PES Chapter Benelux, 29/03/2010Publication AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance
;Visalli, Domenica ;Derluyn, Joff ;Degroote, Stefan ;Leys, Maarten ;Cheng, KaiGermain, MarianneProceedings paper2008, 40th International Conference on Solid State Devices and Materials - SSDM, 23/09/2008Publication AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance
;Visalli, Domenica ;Van Hove, Marleen ;Derluyn, Joff ;Degroote, Stefan ;Leys, MaartenCheng, KaiJournal article2009, Japanese Journal of Applied Physics, (48) 4, p.04C101Publication Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers
Oral presentation2017, 5th international conference on Advances in Electronic and Photonic TechnologiesPublication Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers
Proceedings paper2017, 5th International Conference on Advances in Electronic and Photonic Technologies, 19/06/2017, p.263-266Publication Electrically active defects at the AlN/Si(111) interface studied by DLTS and ESR
Journal article2012, Physica Status Solidi A, (209) 10, p.1851-1856Publication Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C
Proceedings paper2009, International Conference on Solid-State Devices and Materials Conference - SSDM, 7/10/2009, p.816-817Publication Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C
Journal article2010, Japanese Journal of Applied Physics, (49) 4, p.04DF07Publication Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN HFETs by Si substrate removal
;Visalli, Domenica ;Van Hove, Marleen ;Srivastava, Puneet ;Derluyn, Joff ;Das, JoLeys, MaartenJournal article2010, Applied Physics Letters, (97) 11, p.113501Publication GaN-on-Si for high-voltage applications
Meeting abstract2011, 220th Electrochemical Society Fall Meeting Symposium E: GaN and SiC Power Technologies, 9/10/2011, p.2173Publication GaN-on-Si for high-voltage applications
Proceedings paper2011, Gallium Nitride and Silicon Carbide Power Technologies, 9/10/2011, p.101-112Publication GaN-on-Si for power conversion
Proceedings paper2010, The International Conference on Compound Semiconductor Manufacturing Technology - CSMANTECH, 17/05/2010, p.225-228Publication GaN-on-Si power field effect transistors
;Germain, Marianne ;Derluyn, Joff ;Van Hove, Marleen ;Medjdoub, Farid ;Das, JoCheng, KaiProceedings paper2010, International Symposium on VLSI Technology Systems and Applications - VLSI-TSA, 26/04/2010, p.171-172Publication High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates
;Visalli, Domenica ;Van Hove, Marleen ;Derluyn, Joff ;Cheng, Kai ;Degroote, StefanLeys, MaartenJournal article2009, Physica Status Solidi C, (6) S2, p.S988-S991Publication High temperature on- and off-state stress of GaN-on- Si HEMTs with in-situ Si3N4 cap layer
Proceedings paper2010, IEEE International Reliability Physics Symposium - IRPS, 2/05/2010, p.146-151Publication Investigation of light-induced deep-level defect activation at the AlN/Si interface
Journal article2011, Applied Physics Express, (4) 9, p.94101Publication Limitations of field plate effect due to the silicon substrate in AlGaN/GaN/AlGaN DHFETs
Journal article2010, IEEE Transactions on Electron Devices, (57) 12, p.3333-3339