Browsing by Author "Vissouvanadin Soubaretty, Bertrand"
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Publication Analysis of the pre-epi bake conditions on the defect creation in recessed Si1-xGex S/D junctions
Proceedings paper2007, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7, 7/10/2007, p.47-53Publication Electric field dependence of trap-assisted-tunneling current in strained SiGe source/drain junctions
Journal article2009, Applied Physics Letters, (94) 23, p.233507Publication Factors influencing the leakage current in embedded SiGe source/drain junctions
Journal article2008, IEEE Transactions on Electron Devices, (55) 3, p.925-930Publication Impact of the Ge content and the epitaxial thickness on the bandgap shrinkage induced leakage current of recessed Si1-xGex source/drain junctions
Proceedings paper2007, Workshop on Semiconductor Advances for Future Electronics and Sensors - SAFE, 29/11/2007, p.496-200Publication Influence of the highly-doped drain implantation and the window size on defect creation in p/n Si1-xGex source/drain junctions
Publication Influence of the strain-relaxation induced defect creation on the lekage current of embedded Si1-xGex source/drain junctions
Journal article2009-06, Physica Status Solidi C, (6) 8, p.1901-1905Publication Leakage current study of Si1-xCx embedded source/drain junctions
Journal article2008, Applied Surface Science, (254) 19, p.6140-6143